RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE

The ARF1501 is an RF power transistor designed for very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40 MHz. •Specified 250 Volt, 27.12 MHz Characteristics: • Output Power = 750 Watts. • Gain = 17dB (Class C) • Efficien

RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE

The ARF1501 is an RF power transistor designed for very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40 MHz. • Specified 250 Volt, 27.12 MHz Characteristics: • Output Power = 750 Watts. • Gain = 17dB (Class C) • Effi

封装/外壳：T-1 包装：托盘 描述：MOSFET RF N-CH 1000V 30A T1 分立半导体产品 晶体管 - FET，MOSFET - 射频

RF VDMOS Power Devices

RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE

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MOS FIELD EFFECT POWER TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SINGLE DIGIT DISPLAY

[PARA LIGHT] C/A-1501X, C/A-1505X SINGLE DIGIT DISPLAY 1. All dimension are in millimeters (inches). 2. Tolerance is ±0.25 mm (0.01”) unless otherwise specified.

1.5 INCH SINGLE DIGIT DISPLAY

C/A-1501X, C/A-1505X SINGLE DIGIT DISPLAY 1. All dimension are in millimeters (inches). 2. Tolerance is ±0.25 mm (0.01”) unless otherwise specified.

SINGLE DIGIT DISPLAY

[PARA LIGHT] C/A-1501X, C/A-1505X SINGLE DIGIT DISPLAY 1. All dimension are in millimeters (inches). 2. Tolerance is ±0.25 mm (0.01”) unless otherwise specified.

Venture Tape??Cloth Duct Tape

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