Silicon Rectifier

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES 40V, 200A, RDS(ON) = 2.3 mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RDS(ON) = 2.5 mW @VGS = 9V. RoHS compliant.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 40V, 200A, RDS(ON) = 2.3 mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RDS(ON) = 2.5 mW @VGS = 9V. RoHS compliant.

25.0 Amps. Glass Passivated Power Rectifiers High reliability

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