PhotoMOS HE 1 Form A High Capacity

FEATURES Greatly increased load current in a compact DIP package Continuous load current: 3.5A (AQV251G) Greatly improved specifications allow you to use this in place of mercury and mechanical relays Low on-resistance (Typ. 35mΩ, AQV251G)

4-pin high capacity of 1.1A, I/O isolation voltage of 5,000V

FEATURES Greatly increased capacity Continuous load current: 1.1A High insulation I/O isolation voltage: 5,000 Vrms Compact 4-pin DIP type The improved performance relative to mercury or mechanical relays TYPICAL APPLICATIONS Measuring instruments Security and disaster-preventing sy

PhotoMOS 功率 1b

POWER PhotoMOS RELAYS 1-channel (Form B) TypeFEATURES\n1. High capacity\nA maximum 0.5A load can be controlled with a 5 mA input current. The ON resis\ntance is low at 2.8Ω (typ.)\n2. 1 Form B\nThis has been realized thanks to the builtin MOSFET processed by our proprietary method, DSD (Double-diffu 1. High capacity\nA maximum 0.5A load can be controlled with a 5 mA input current. The ON resis\ntance is low at 2.8Ω (typ.)\n2. 1 Form B\nThis has been realized thanks to the builtin MOSFET processed by our proprietary method, DSD (Double-diffused and Selective Doping) method. \u0001\n3. Compact sl;

POWER PhotoMOS RELAYS 1-channel(Form B)Type

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封装/外壳：4-SIP 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：SSR RELAY SPST-NC 500MA 0-400V 继电器 固态继电器

封装/外壳：4-SIP 包装：管件 描述：SSR RELAY SPST-NC 500MA 0-400V 继电器 固态继电器

Chopper Transistor

Chopper Transistor PNP Silicon

Chopper Transistor

Chopper Transistor PNP Silicon

Wideband, High-Slew Rate, Monolithic Op Amp

文件：374.92 Kbytes Page：6 Pages

Wideband, High-Slew Rate, Monolithic Op Amp

文件：374.92 Kbytes Page：6 Pages

Wideband, High-Slew Rate, Monolithic Op Amp

文件：374.92 Kbytes Page：6 Pages