PhotoMOS HE 1 Form A High Capacity

FEATURES Greatly increased load current in a compact DIP package Continuous load current: 3.5A (AQV251G) Greatly improved specifications allow you to use this in place of mercury and mechanical relays Low on-resistance (Typ. 35mΩ, AQV251G)

4-pin high capacity of 1.1A, I/O isolation voltage of 5,000V

FEATURES Greatly increased capacity Continuous load current: 1.1A High insulation I/O isolation voltage: 5,000 Vrms Compact 4-pin DIP type The improved performance relative to mercury or mechanical relays TYPICAL APPLICATIONS Measuring instruments Security and disaster-preventing sy

POWER PhotoMOS RELAYS (Voltage Sensitive Type)

POWER PhotoMOS RELAYS(Voltage Sensitive Type) FEATURES 1. A voltage sensitive power PhotoMOS relay Conventional power PhotoMOS relays are connected externally to an input limiting resistor in order to obtain the appropriate LED current. Adding an internal constant-current element render

封装/外壳：4-SIP 包装：散装 描述：SSR RELAY SPST-NO 600MA 0-400V 继电器 固态继电器

封装/外壳：4-SIP 包装：散装 描述：SSR RELAY SPST-NO 600MA 0-400V 继电器 固态继电器

PhotoMOS 功率 1a 电压驱动

HIGH EFFICIENCY RECTIFIERS(1.0A,50-400V)

Switchmode Power Rectifiers HIGH EFFICIENCY RECTIFIERS 1.0 AMPERES 50 -- 400 VOLTS

SCHOTTKY BARRIER RECTIFIERS(1.0A,20-60V)

HIGH FREQUENCY NPN TRANSISTOR ARRAY

DESCRIPTION AND APPLICATIONS The µPA104 is a user-configurable, Si bipolar transistor array for formation of high speed OR/NOR gates. Its internal transistor configuration and external connection options allow the user considerable flexibility in its application. Its high gain bandwidth product (

HIGH FREQUENCY NPN TRANSISTOR ARRAY

DESCRIPTION AND APPLICATIONS The µPA104 is a user-configurable, Si bipolar transistor array for formation of high speed OR/NOR gates. Its internal transistor configuration and external connection options allow the user considerable flexibility in its application. Its high gain bandwidth product (

Negative Regulator

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