PhotoMOS RELAYS

PD Type 2-channel (Form A) Type FEATURES 1. Flat-Packaged Type (W) 8.8× (D) 19.46× (H) 3.9mm (W) .346× (D) .766×(H) .154inch 2. High capacity Supports the various types of load control, from very small loads to a maximum 1.8A at the rated load voltage 60V (AQW272) 3. High sensitivity • Lo

封装/外壳：8-SMD（0.300"，7.62mm） 包装：散装 描述：SSR RELAY SPST-NO 550MA 0-200V 继电器 固态继电器

封装/外壳：8-SMD（0.300"，7.62mm） 包装：散装 描述：SSR RELAY SPST-NO 550MA 0-200V 继电器 固态继电器

固态继电器(可控硅输出)

PhotoMOS RELAYS

PD Type 2-channel (Form A) Type FEATURES 1. Flat-Packaged Type (W) 8.8× (D) 19.46× (H) 3.9mm (W) .346× (D) .766×(H) .154inch 2. High capacity Supports the various types of load control, from very small loads to a maximum 1.8A at the rated load voltage 60V (AQW272) 3. High sensitivity • Lo

PhotoMOS RELAYS

PD Type 2-channel (Form A) Type FEATURES 1. Flat-Packaged Type (W) 8.8× (D) 19.46× (H) 3.9mm (W) .346× (D) .766×(H) .154inch 2. High capacity Supports the various types of load control, from very small loads to a maximum 1.8A at the rated load voltage 60V (AQW272) 3. High sensitivity • Lo

Band-switching diode

DESCRIPTION Planar high performance band-switching diode in a small plastic SOD523 (SC-79) SMD package. FEATURES • Small plastic SMD package • Continuous reverse voltage: max. 35 V • Continuous forward current: max. 100 mA • Low diode capacitance: max. 1.2 pF • Low diode forward resist

Round Type

Round Type φ 3.0 mm Series

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION This device is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. The THD series are designed for use in horizontal deflection circuits in televisions and monitors. ■ STMicroelectroni

Ultra Bright GaAIAs Lamps

文件：30.91 Kbytes Page：1 Pages

Round Type

文件：30.41 Kbytes Page：1 Pages