PhotoMOS RELAYS

PD Type 2-channel (Form A) Type FEATURES 1. Flat-Packaged Type (W) 8.8× (D) 19.46× (H) 3.9mm (W) .346× (D) .766×(H) .154inch 2. High capacity Supports the various types of load control, from very small loads to a maximum 1.8A at the rated load voltage 60V (AQW272) 3. High sensitivity • Lo

封装/外壳：8-SMD（0.300"，7.62mm） 包装：散装 描述：SSR RELAY SPST-NO 300MA 0-400V 继电器 固态继电器

封装/外壳：8-SMD（0.300"，7.62mm） 包装：散装 描述：SSR RELAY SPST-NO 300MA 0-400V 继电器 固态继电器

N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION Silicon n-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and intended for use as a line current interruptor in telephone sets and for applications in relay, high speed and line transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc., due to

N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION Silicon n-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and intended for use as a line current interruptor in telephone sets and for applications in relay, high speed and line transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc., due to

HIGH SPEED CMOS QUAD OPERATIONAL AMPLIFIERS

Description The TS274 devices are low cost, quad operational amplifiers designed to operate with single or dual supplies. These operational amplifiers use the ST silicon gate CMOS process giving an excellent consumption-speed ratio. These series are ideally suited for low consumption applicatio

HIGH SPEED CMOS QUAD OPERATIONAL AMPLIFIERS

Description The TS274 devices are low cost, quad operational amplifiers designed to operate with single or dual supplies. These operational amplifiers use the ST silicon gate CMOS process giving an excellent consumption-speed ratio. These series are ideally suited for low consumption applicatio

HIGH SPEED CMOS QUAD OPERATIONAL AMPLIFIERS

Description The TS274 devices are low cost, quad operational amplifiers designed to operate with single or dual supplies. These operational amplifiers use the ST silicon gate CMOS process giving an excellent consumption-speed ratio. These series are ideally suited for low consumption applicatio