Compact DIP8-pin type of 60V to 600V load voltage High-speed inspection machines

FEATURES ● Compact 8-pin DIP size (W) 6.4 × (L) 9.78 × (H) 3.9 mm 8-pin DIP size (through hole terminal type). ● Applicable for 2 Form A use as well as two independent 1 Form A use ● Controls low-level analog signals ● High sensitivity and high speed response ● Low-level off state leakage

GU (General Use) Type [2-Channel (Form A) Type]

FEATURES 1. Compact 8-pin DIP size The device comes in a compact (W) 6.4 × (L) 9.78 ×(H) 3.9 mm (W) .252×(L) .385×(H) .154 inch, 8-pin DIP size (through hole terminal type). 2. Applicable for 2 Form A use as well as two independent 1 Form A use 3. Controls low-level analog signals P

封装/外壳：8-SMD（0.300"，7.62mm） 包装：管件 描述：SSR RELAY SPST-NO 300MA 0-100V 继电器 固态继电器

封装/外壳：8-SMD（0.300"，7.62mm） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：SSR RELAY SPST-NO 300MA 0-100V 继电器 固态继电器

PhotoMOS GU 2a

Compact DIP8-pin type of 60V to 600V load voltage High-speed inspection machines

FEATURES ● Compact 8-pin DIP size (W) 6.4 × (L) 9.78 × (H) 3.9 mm 8-pin DIP size (through hole terminal type). ● Applicable for 2 Form A use as well as two independent 1 Form A use ● Controls low-level analog signals ● High sensitivity and high speed response ● Low-level off state leakage

Compact DIP8-pin type of 60V to 600V load voltage High-speed inspection machines

FEATURES ● Compact 8-pin DIP size (W) 6.4 × (L) 9.78 × (H) 3.9 mm 8-pin DIP size (through hole terminal type). ● Applicable for 2 Form A use as well as two independent 1 Form A use ● Controls low-level analog signals ● High sensitivity and high speed response ● Low-level off state leakage

GU (General Use) Type [2-Channel (Form A) Type]

FEATURES 1. Compact 8-pin DIP size The device comes in a compact (W) 6.4 × (L) 9.78 ×(H) 3.9 mm (W) .252×(L) .385×(H) .154 inch, 8-pin DIP size (through hole terminal type). 2. Applicable for 2 Form A use as well as two independent 1 Form A use 3. Controls low-level analog signals P

PhotoMOS GU 2a

PhotoMOS GU 2a

UHF variable capacitance diode

DESCRIPTION The BB215 is a variable capacitance diode, fabricated in planar technology, and encapsulated in the SOD80 glass SMD package. FEATURES • Excellent linearity • Matched to 3 • Small hermetically sealed glass SMD package • C28: 2 pF; ratio: 8.3 • Low series resistance. APPLICATIONS

SMALL OUTLINE OPTOISOLATORS TRANSISTOR OUTPUT

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Description: The NTE215 is a silicon NPN Darlington transistor in a TO3P type package. Typical applications in clude motor drivers, printer hammer drivers, relay drivers, regulated DC power supply controllers. Features: • High DC Current Gain • Large Current Capacity and Wide ASO

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION This device is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. The THD series is designed for use in horizontal deflection circuits in televisions and monitors. ■ STMicroelectronic