HE (High-function Economy) Type [1-Channel (Form A) Type]

FEATURES 1. Highly sensitive and low on-resistance 2. Controls various types of loads such as relays, motors, lamps and solenoids. 3. Optical coupling for extremely high isolation 5,000 Vrms I/O isolation available. 4. Low-level off state leakage current 5. Eliminates the need for a p

Both low on-resistance and good cost-performance achieved. Measuring instruments

FEATURES 1. Wide variation of 40V, 60V, 100V, 200V, 250V, 400V, 600V, 1,000V and 1,500V load voltage 2. Low on-resistance of typ. 0.6Ω (AQV251) 3. Reinforced insulation type of 5,000V I/O isolation available TYPICAL APPLICATIONS • Measuring instruments • Data communication equipment • Telep

封装/外壳：6-SMD（0.300"，7.62mm） 包装：散装 描述：SSR RELAY DPST-NO 150MA 0-400V 继电器 固态继电器

封装/外壳：6-SMD（0.300"，7.62mm） 包装：散装 描述：SSR RELAY DPST-NO 150MA 0-400V 继电器 固态继电器

N-channel enhancement mode vertical D-MOS transistors

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT54 (TO-92) variant package. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown • Low RDSon. APPLICATIONS • Line current interruptor in telephone sets • Relay, high-speed a

P-channel enhancement mode vertical D-MOS transistor

DESCRIPTION P-channel vertical D-MOS transistor in a TO-92 variant envelope and intended for use as a line current interruptor in relay, high-speed and line transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown.

P-channel enhancement mode vertical D-MOS transistor

DESCRIPTION P-channel vertical D-MOS transistor in a TO-92 variant envelope and intended for use as a line current interruptor in relay, high-speed and line transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown.

MEDIUM CURRENT PLASTIC RECTIFIER(VOLTAGE - 200 to 1300 Volts CURRENT - 3.0 Amperes)

FEATURES ● Exce High surge current capability ● Plastic package has Underwriters Laboratory Flammability Classification 94V-O ● Low leakage ● Void-free molded in DO-201AD plastic package ● High current operation of 3 Amperes at TA=95 ¢J with no thermal runaway ● eds environmental standards o

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE253 (NPN) and NTE254 (PNP) are silicon complementary Darlington transistors in a TO126 type case designed for general–purpose amplifier and low–speed switching applications. Features: • High DC Current Gain: hFE = 2000 (Typ) @ IC = 2A • Monolithic Construction wit