DIP6-pin type suited for radio frequent switching

PhotoMOS RF 1 Form A DIP6-pin type suited for radio frequent switching FEATURES 1. High frequency characteristics with low capacitance between output terminals Low output capacitance: typ. 4.8 pF Isolation loss: 40 dB or more (at 1 MHz)(AQV225) 2. High speed switching

封装/外壳：6-DIP（0.300"，7.62mm） 包装：散装 描述：SSR RELAY DPST-NO 50MA 0-80V 继电器 固态继电器

封装/外壳：6-DIP（0.300"，7.62mm） 包装：散装 描述：SSR RELAY DPST-NO 50MA 0-80V 继电器 固态继电器

固态继电器(可控硅输出)

DIP6-pin type suited for radio frequent switching

PhotoMOS RF 1 Form A DIP6-pin type suited for radio frequent switching FEATURES 1. High frequency characteristics with low capacitance between output terminals Low output capacitance: typ. 4.8 pF Isolation loss: 40 dB or more (at 1 MHz)(AQV225) 2. High speed switching

DIP6-pin type suited for radio frequent switching

PhotoMOS RF 1 Form A DIP6-pin type suited for radio frequent switching FEATURES 1. High frequency characteristics with low capacitance between output terminals Low output capacitance: typ. 4.8 pF Isolation loss: 40 dB or more (at 1 MHz)(AQV225) 2. High speed switching

DIP6-pin type suited for radio frequent switching

PhotoMOS RF 1 Form A DIP6-pin type suited for radio frequent switching FEATURES 1. High frequency characteristics with low capacitance between output terminals Low output capacitance: typ. 4.8 pF Isolation loss: 40 dB or more (at 1 MHz)(AQV225) 2. High speed switching

PhotoMOS RF 1 Form A DIP6-pin type suited for radio frequent switching

PhotoMOS RF 1 Form A DIP6-pin type suited for radio frequent switchingFEATURES\n1. High frequency characteristics with low capacitance between output terminals\n   Low output capacitance: typ. 4.8 pF\n   Isolation loss: 40 dB or more (at 1 MHz)(AQV225)\n2. High speed switching\n   Turn on time: typ. 1. High frequency characteristics with low capacitance between output terminals\n   Low output capacitance: typ. 4.8 pF\n   Isolation loss: 40 dB or more (at 1 MHz)(AQV225)\n2. High speed switching\n   Turn on time: typ. 0.1 ms\n   Turn off time: typ. 0.03 ms\n3. Low-level off state leakage current ;

PhotoMOS Relay Dimensions

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固态继电器(可控硅输出)

RF (Radio Frequency) Type SOP Series [1-Channel (Form A) Type] Low On resistance

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RF (Radio Frequency) Type SOP Series [1-Channel (Form A) Type] Low On resistance

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VHF power MOS transistor

DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for communications transmitter applications in the VHF frequency range. The transistor is encapsulated in a 4-lead, SOT123 flange envelope, with a ceramic cap. All leads are isolated from the flange. FEATURES • E

Three quadrant triacs high commutation

GENERAL DESCRIPTION Glass passivated high commutation triacs in a plastic envelope suitable for surface mounting, intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. These devices will commutate the full rated rms current at the maximum rated junction t

Silicon Controlled Rectifiers

Silicon Controlled Rectifiers Reverse Blocking Thyristors . . . designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits. • Glass Passivated Junctions with Center Gate Fire for Greater Parameter Uniformity and Stability

Dual P-channel enhancement mode MOS transistor

DESCRIPTION Two P-channel enhancement mode MOS transistors in an 8-pin plastic SOT96-1 (SO8) package. FEATURES • High-speed switching • No secondary breakdown • Very low on-resistance. APPLICATIONS • Motor and actuator driver • Power management • Synchronized rectification.

SILICON TRIACS

SILICON TRIACS ● Sensitive Gate Triacs ● 8 A RMS, 70 A Peak ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● Max IGT of 5 mA (Quadrant 1)