型号 功能描述 生产厂家 企业 LOGO 操作
APT901R1HN

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=9.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.1Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 9.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.1Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 10.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.1Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 10.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.1Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

ISC

无锡固电

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

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Seme LAB

APT901R1HN产品属性

  • 类型

    描述

  • 型号

    APT901R1HN

  • 功能描述

    TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 9.5A I(D) | TO-258ISO

更新时间:2025-10-4 16:42:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
APT
22+
TO-247
8000
原装正品支持实单
APT
23+
TO-247
6000
原装正品,支持实单
APT
23+
TO-247
7300
专注配单,只做原装进口现货
MICROSEMI
638
原装正品
APT
TO-247
22+
6000
十年配单,只做原装
IXFN
23+
标准封装
5000
原厂授权一级代理 IGBT模块 可控硅 晶闸管 熔断器质保
APTMICROSEMI
23+
TO-247
5000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
24+
N/A
69000
一级代理-主营优势-实惠价格-不悔选择
APT
25+
TO-247
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
MICROCHIP
25+
SMT
15000
原装正品长期现货

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