N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

POWER MOS IV® N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 12A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.9Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

Introduction to Knowles Precision Devices

Applications  RF amplifier  LC Filters and Networks  Broadband Wireless LAN  Medical Devices  Cordless and Cellular phones  DR/Crystal Oscillator  Microstrip line filters

OFF-LINE QUASI-RESONANT FLYBACK SWITCHING REGULATOR

FEATURES ■ Quasi-Resonant Operation ■ Output Power to 120 W ■ Low-Loss, Pulse-Ratio-Control Standby Mode ■ Temperature-Compensated Pulse-by-Pulse Over-Current Protection ■ Latched Over-Voltage and Thermal Protection ■ Under-Voltage Lockout with Hysteresis ■ Active Low-Pass Filter for Enhanc

OVERVOLTAGE PROTECTIVE CIRCUIRS BUILT-IN SWITCHING POWER SUPPLY

Overview The AN8090 and the AN8090S enables high-speed control up to 500 kHz and have various protective functions for over-current, overvoltage, and thermal protection n order to improve reliability of the power supply.

CABLE CLAMPS AND TIES

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Thermal Cutoff

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