N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

POWER MOS IV® N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 12A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.9Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

OVERVOLTAGE PROTECTIVE CIRCUIRS BUILT-IN SWITCHING POWER SUPPLY

Overview The AN8090 and the AN8090S enables high-speed control up to 500 kHz and have various protective functions for over-current, overvoltage, and thermal protection n order to improve reliability of the power supply.

Schottky MiniMod

Schottky MiniMod ● Schottky Barrier Rectifier ● Guard ring protection ● 2X40 Amperes avg. ● 175°C junction temperature ● Reverse energy tested ● VRRM 80 to 100 volts ● ROHS Compliant

Full-Mold, Separate Excitation Switching Type

■ Features • Compact full-mold package (equivalent to TO220) • High efficiency: 80 • Requires only 4 discrete components • Internally-adjusted phase correction and output voltage • Built-in reference oscillator (60kHz) • Built-in overcurrent and thermal protection circuits ■

Varactor-Tuned Oscillators

Description HP VTO-8000 Series oscillators use a silicon transistor chip as a negative resistance oscillator. The oscillation frequency is determined by a silicon abrupt varactor diode acting as a voltage-variable capacitor in a thin-film micro stripline resonator. This provides extremely fast