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型号 功能描述 生产厂家 企业 LOGO 操作
APT8065SVRG

N-Channel MOSFET

ROHS

MICROCHIP

微芯科技

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast

ADPOW

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

ADPOW

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast

ADPOW

SCRs

General Description The Teccor line of thyristor SCR semi-conductors are half-wave, unidirectional, gate-controlled rectifiers which complement Teccors line of sensitive SCRs. Teccor offers devices with ratings of 1 A to 70 A and 200 V to 1000 V, with gate sensitivities from 10 mA to 50 mA. If ga

TECCOR

SCRs

General Description The Teccor line of thyristor SCR semi-conductors are half-wave, unidirectional, gate-controlled rectifiers which complement Teccors line of sensitive SCRs. Teccor offers devices with ratings of 1 A to 70 A and 200 V to 1000 V, with gate sensitivities from 10 mA to 50 mA. If ga

TECCOR

APT8065SVRG产品属性

  • 类型

    描述

  • 型号

    APT8065SVRG

  • 功能描述

    MOSFET N-CH 800V 13A D3PAK

  • RoHS

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    POWER MOS V®

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • MOSFET N 通道,金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds(最大)@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A,10V Id 时的

  • Vgs(th)(最大)

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

更新时间:2026-7-24 12:36:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
APT
23+
5000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
APT
23+
TO-220
50000
全新原装正品现货,支持订货
Microch
20+
NA
33560
原装优势主营型号-可开原型号增税票
26+
N/A
67000
一级代理-主营优势-实惠价格-不悔选择
MICROCHIP
23+
7300
专注配单,只做原装进口现货
APT
23+
TO-59
8510
原装正品代理渠道价格优势
APT
23+
模块
420
全新原装正品,量大可订货!可开17%增值票!价格优势!
APT
24+
28
Microsemi
25+
电联咨询
7800
公司现货,提供拆样技术支持
APT
25+
模块
90000
一级代理商进口原装现货、价格合理

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