Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Low Distortion, High Speed Rail-to-Rail Input/Output Amplifiers

GENERAL DESCRIPTION The AD8027/AD80281 are high speed amplifiers with rail-to-rail input and output that operate on low supply voltages and are optimized for high performance and wide dynamic signal range. The AD8027/AD8028 have low noise (4.3 nV/√Hz, 1.6 pA/√Hz) and low distortion (120 dBc at

Low Distortion, High Speed Rail-to-Rail Input/Output Amplifiers

GENERAL DESCRIPTION The AD8027/AD80281 are high speed amplifiers with rail-to-rail input and output that operate on low supply voltages and are optimized for high performance and wide dynamic signal range. The AD8027/AD8028 have low noise (4.3 nV/√Hz, 1.6 pA/√Hz) and low distortion (120 dBc at

Self-excited RCC pseudo-resonance type AC-DC switching power supply control IC

■Overview The AN8028 is an IC developed for controlling the self-excited switching power supply employing the RCC pseudo-resonance type control method. It is compact, equipped only with the necessary minimum functions. The maximum on-period and the minimum off-period can be set separately by us

2.5 GHz sigma delta fractional-N / 760 MHz IF integer frequency synthesizers

GENERAL DESCRIPTION The SA8028 BICMOS device integrates programmable dividers, charge pumps and phase comparators to implement phase–locked loops. The device is designed to operate from 3 NiCd cells, in pocket phones, with low current and nominal 3 V supplies. FEATURES • Extremely low phase no

DUTY CONTROLLER

文件：190 Kbytes Page：6 Pages