Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Field Effect Transistor Silicon N-Channel MOS Type (U-MOS??H)

High-Efficiency DC/DC Converter Applications Notebook PC Applications Portable Equipment Applications • Small footprint due to a small and thin package • High-speed switching • Small gate charge: QSW = 20 nC (typ.) • Low drain-source ON-resistance: RDS (ON) = 2.0 mΩ (typ.) • High forward tr

Low Distortion, High Speed Rail-to-Rail Input/Output Amplifiers

GENERAL DESCRIPTION The AD8027/AD80281 are high speed amplifiers with rail-to-rail input and output that operate on low supply voltages and are optimized for high performance and wide dynamic signal range. The AD8027/AD8028 have low noise (4.3 nV/√Hz, 1.6 pA/√Hz) and low distortion (120 dBc at

T1/E1 Extended Temperature Range SMD Single Transformers

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TYPE N 18 GHZ RADIUS RIGHT ANGLE MALE TO MALE ADAPTER

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Low Distortion, High Speed Rail-to-Rail Input/Output Amplifiers

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