位置：首页 > IC中文资料第3200页 > APT50GR120JD30
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
APT50GR120JD30 | Power Semiconductors Power Modules RF Power MOSFETs POWER MOS 7® MOSFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses alon | Microsemi 美高森美 |   | |
APT50GR120JD30 | Power Semiconductors Power Modules 文件：2.83336 Mbytes Page：44 Pages | Microsemi 美高森美 | | |
APT50GR120JD30 | 封装/外壳：SOT-227-4 包装：散装 描述：IGBT MOD 1200V 84A 417W SOT227 分立半导体产品 晶体管 - IGBT - 模块 | Microchip 微芯科技 | | |
APT50GR120JD30 | NPT IGBT & Trench IGBT | Microchip 微芯科技 | |
APT50GR120JD30产品属性
- 类型
描述
- 型号
APT50GR120JD30
- 制造商
Microsemi Corporation
- 功能描述
Insulated Gate Bipolar Transistor - Fieldstop Low Freq - Combi
- 制造商
Microsemi Corporation
- 功能描述
POWER IGBT TRANSISTOR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
APT |
23+ |
TO247 |
8560 |
受权代理!全新原装现货特价热卖! |
|||
MICROSEMI/美高森美 |
21+ |
TO-247 |
120000 |
长期代理优势供应 |
|||
MICROSEMI |
25+23+ |
TO-247 |
35163 |
绝对原装正品全新进口深圳现货 |
|||
Microsemi Corporation |
22+ |
SOT227 |
9000 |
原厂渠道,现货配单 |
|||
Microsemi/美高森美 |
23+ |
TO264 |
8400 |
专注配单,只做原装进口现货 |
|||
MICROSEMI |
638 |
原装正品 |
|||||
Microchip Technology |
23+ |
标准封装 |
2000 |
全新原装正品现货直销 |
|||
Microchip Technology |
25+ |
SOT-227-4 |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
24+ |
N/A |
78000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
MICROSEMI/美高森美 |
23+ |
TO-247 |
50000 |
全新原装正品现货,支持订货 |
APT50GR120JD30芯片相关品牌
APT50GR120JD30规格书下载地址
APT50GR120JD30参数引脚图相关
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APT50GR120JD30数据表相关新闻
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2019-3-5
DdatasheetPDF页码索引
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