Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fas

1 GHz to 60 GHz, Reflective, Silicon SPDT Switch

GENERAL DESCRIPTION The ADRF5032 is a reflective, single-pole double-throw (SPDT) switch manufactured using the silicon process. The ADRF5032 operates from 1 GHz to 60 GHz with insertion loss of lower than 2.0 dB and isolation of higher than 32 dB. The device has a RF input power handling cap

1 GHz to 60 GHz, Reflective, Silicon SPDT Switch

GENERAL DESCRIPTION The ADRF5032 is a reflective, single-pole double-throw (SPDT) switch manufactured using the silicon process. The ADRF5032 operates from 1 GHz to 60 GHz with insertion loss of lower than 2.0 dB and isolation of higher than 32 dB. The device has a RF input power handling cap

1 GHz to 60 GHz, Reflective, Silicon SPDT Switch

GENERAL DESCRIPTION The ADRF5032 is a reflective, single-pole double-throw (SPDT) switch manufactured using the silicon process. The ADRF5032 operates from 1 GHz to 60 GHz with insertion loss of lower than 2.0 dB and isolation of higher than 32 dB. The device has a RF input power handling cap

18 (16/30) AWG Tinned Copper

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Quartz SMD, Ceramic

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