Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. •

isc N-Channel MOSFET Transistor

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Evaluating the ADL8142 GaAs, pHEMT, MMIC, Low Noise Amplifier, 23 GHz to 31 GHz

GENERAL DESCRIPTION The ADL8142-EVALZ consists of a 4-layer printed circuit board (PCB) fabricated from 8 mil thick, Rogers 4003C and Isola 370HR, copper clad, forming a nominal thickness of 62 mils. The RFIN and RFOUT ports on the ADL8142-EVALZ are populated with 2.92 mm, female coaxial conn

EiceDRIVER™ enhanced 1EDI302xAS/1EDI303xAS evaluation board

The EiceDRIVER™ enhanced 1EDI302xAS/1EDI303xAS evaluation board is a versatile evaluation platform for the EiceDRIVER™ enhanced 1EDI302xAS/1EDI303xAS family. It features a half bridge configuration, see Figure 1. There is the option to mount either the HybridPACK™ DSC IGBT module or a discrete P

Board to Board Connector

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MIL-C-5015 Connectors

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Wireless Power Receiver for 15W Applications

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