位置：首页 > IC中文资料第5602页 > APT5010B2
APT5010B2价格
参考价格：￥74.1739
型号：APT5010B2FLLG 品牌：Microsemi 备注：这里有APT5010B2多少钱，2025年最近7天走势，今日出价，今日竞价，APT5010B2批发/采购报价，APT5010B2行情走势销售排行榜，APT5010B2报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
APT5010B2 | Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. POWER MOS 7® FREDFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses alo | ADPOW |   | |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. POWER MOS 7® FREDFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses alo | ADPOW | | ||
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs POWER MOS VI™ Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, deliver | ADPOW | | ||
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. POWER MOS 7™ Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TMby significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along wit | ADPOW | | ||
POWER MOS 7 MOSFET POWER MOS 7® MOSFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses alon | ADPOW | | ||
Power MOS 7 is a new generation of low loss, high voltage, N-Channel POWER MOS 7® MOSFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses alon | Microsemi 美高森美 | | ||
POWER MOS 7 MOSFET POWER MOS 7® MOSFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses alon | ADPOW | | ||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. | ADPOW | | ||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching | ADPOW | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 47A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.1Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor 文件：419.64 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
POWER MOS 7 FREDFET 文件：174.11 Kbytes Page：5 Pages | ADPOW | | ||
POWER MOS 7 FREDFET 文件：174.11 Kbytes Page：5 Pages | ADPOW | | ||
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. 文件：66.16 Kbytes Page：2 Pages | ADPOW | | ||
isc N-Channel MOSFET Transistor 文件：419.64 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
New T-MAX??Package (Clip-mounted TO-247 Package) 文件：66.57 Kbytes Page：4 Pages | ADPOW | | ||
New T-MAX??Package (Clip-mounted TO-247 Package) 文件：66.57 Kbytes Page：4 Pages | ADPOW | |
APT5010B2产品属性
- 类型
描述
- 型号
APT5010B2
- 制造商
ADPOW
- 制造商全称
Advanced Power Technology
- 功能描述
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
APT |
24+ |
8866 |
|||||
Microch |
20+ |
NA |
33560 |
原装优势主营型号-可开原型号增税票 |
|||
APT |
22+ |
原厂原封 |
8200 |
原装现货库存.价格优势!! |
|||
APT |
07+ |
T-MAX |
450 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
APT |
21+ |
TO247 |
900 |
原装现货假一赔十 |
|||
APTMICROSEMI |
17+ |
T-MAXB2 |
31518 |
原装正品 可含税交易 |
|||
MICROCHIP(美国微芯) |
24+ |
TO-247 |
7793 |
支持大陆交货,美金交易。原装现货库存。 |
|||
APT |
19+ |
MODULE |
1290 |
主打模块,大量现货供应商QQ2355605126 |
|||
APT |
23+ |
TO247 |
28888 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
24+ |
N/A |
53000 |
一级代理-主营优势-实惠价格-不悔选择 |
APT5010B2规格书下载地址
APT5010B2参数引脚图相关
- bc01
- ba028
- b533
- avr单片机
- avl
- avb
- atmega8
- atmega16
- atmega
- at91sam9263
- at91sam9261
- at89s52
- at89s51
- at89c52
- at89c51
- at89c2051
- as3410
- arm应用
- arm内核
- arm11
- APU0063
- APT8075
- APT8065
- APT8030
- APT8018
- APT8015
- APT8011
- APT7846
- APT7843
- APT6040
- APT6035
- APT6030
- APT6015
- APT50GN60BDQ2G
- APT50GN120L2DQ2G
- APT50GN120B2G
- APT50GF60JU2
- APT50GF120LRG
- APT50GF120JRDQ3
- APT50GF120B2RG
- APT50DF170HJ
- APT5027
- APT5020
- APT5017
- APT5016BLLG
- APT5016BFLLG
- APT5016BFLL
- APT5016
- APT5015
- APT5014BLLG
- APT5014
- APT5012
- APT5010LLLG
- APT5010LFLLG
- APT5010JVRU3
- APT5010JVRU2
- APT5010JLLU3
- APT5010JLLU2
- APT5010B2LLG
- APT5010B2FLLG
- APT4M120K
- APT48M80L
- APT47N65BC3G
- APT47N60SC3G
- APT47N60BC3G
- APT47M60J
- APT47GA60JD40
- APT47F60J
- APT46GA90JD40
- APT45GP120JDQ2
- APT45GP120BG
- APT45GP120B2DQ2G
- APT44GA60BD30
- APT44GA60B
- APT44F80L
- APT44F80B2
- APT43M60L
- APT43M60B2
- APT43GA90BD30
- APT43GA90B
- APT4030
- APT4020
- APT3216
- APT27H
- APT27
- APT17
- APT1608
- APT1232
- APT1231
- APT1222
- APT1221
- APT1212
- APT1211
- AP-T12
- AP-T11
- APT-106
- APT-104
- APT1004
- APT1001
- AP-T02
APT5010B2数据表相关新闻
APT32F101H6S6
APT32F101H6S6，全新原装现货0755-82732291当天发货或门市自取. QQ：1755232575 /QQ：1157611585，微信号:87680558.
2021-3-12APT60GF120JRDQ3
制造商零件编号 APT60GF120JRDQ3 Manufacturer Or OEM Microsemi Corporation 描述 IGBT 1200V 149A 625W SOT227 说明 IGBT Module NPT 单路 1200V 149A 625W 底座安装 ISOTOP? 对无铅/(RoHS)规范的达标情况 无铅 / 符合限制有害物质指令(RoHS)规范要求 湿气敏感性等级（MSL） 1（无限） 最低订购数量 1 标准包装 1
2020-12-11APT30DQ60BG 原装优势
原装正品现货热卖中，焕盛达-专注原装 用芯服务；
2020-7-20APT50M60JVR 假一罚十
进口原装正品 ，欢迎咨询。
2020-6-29APT10M11JVFR，APT150GN120J，APT150GN120JDQ4，APT150GN60J，APT150GN60JDQ4
APT10M11JVFR，APT150GN120J，APT150GN120JDQ4，APT150GN60J，APT150GN60JDQ4
2020-2-23APT8020JFLL
APT8020JFLL，全新原装当天发货或门市自取0755-82732291.
2019-3-5
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
