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APT5010B2价格

参考价格：￥74.1739

型号：APT5010B2FLLG 品牌：Microsemi 备注：这里有APT5010B2多少钱，2025年最近7天走势，今日出价，今日竞价，APT5010B2批发/采购报价，APT5010B2行情走势销售排行榜，APT5010B2报价。

型号	功能描述	生产厂家企业	LOGO
APT5010B2	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. POWER MOS 7® FREDFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses alo	ADPOW	ADPOW
APT5010B2	Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.	APT 晶科	APT
APT5010B2FLL	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. POWER MOS 7® FREDFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses alo	ADPOW	ADPOW
APT5010B2LC	Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs POWER MOS VI™ Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, deliver	ADPOW	ADPOW
APT5010B2LL	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. POWER MOS 7™ Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TMby significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along wit	ADPOW	ADPOW
APT5010B2LL	Power MOS 7 is a new generation of low loss, high voltage, N-Channel POWER MOS 7® MOSFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses alon	Microsemi 美高森美	Microsemi
APT5010B2LL	POWER MOS 7 MOSFET POWER MOS 7® MOSFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses alon	ADPOW	ADPOW
APT5010B2LL_04	POWER MOS 7 MOSFET POWER MOS 7® MOSFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses alon	ADPOW	ADPOW
APT5010B2VFR	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.	ADPOW	ADPOW
APT5010B2VR	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching	ADPOW	ADPOW
APT5010B2VR	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 47A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.1Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D	ISC 无锡固电	ISC
APT5010B2FLL	isc N-Channel MOSFET Transistor 文件：419.64 Kbytes Page：2 Pages	ISC 无锡固电	ISC
APT5010B2FLL	POWER MOS 7 FREDFET 文件：174.11 Kbytes Page：5 Pages	ADPOW	ADPOW
APT5010B2FLL_04	POWER MOS 7 FREDFET 文件：174.11 Kbytes Page：5 Pages	ADPOW	ADPOW
APT5010B2FLLG	FREDFETs	Microchip 微芯科技	Microchip
APT5010B2LC	Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. 文件：66.16 Kbytes Page：2 Pages	ADPOW	ADPOW
APT5010B2LC	POWER MOS VI 500V 47A 0.100 Ohm	APT 晶科	APT
APT5010B2LL	isc N-Channel MOSFET Transistor 文件：419.64 Kbytes Page：2 Pages	ISC 无锡固电	ISC
APT5010B2VR	New T-MAX??Package (Clip-mounted TO-247 Package) 文件：66.57 Kbytes Page：4 Pages	ADPOW	ADPOW
APT5010B2VRG	New T-MAX??Package (Clip-mounted TO-247 Package) 文件：66.57 Kbytes Page：4 Pages	ADPOW	ADPOW

APT5010B2产品属性

类型
描述
型号
APT5010B2
制造商
ADPOW
制造商全称
Advanced Power Technology
功能描述
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

APT5010B2供应商更多...

更新时间：2025-11-24 10:22:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市高捷芯城科技有限公司	APT5010B2VRG	MICROCHIP(美国微芯)	24+	TO-247	7793	支持大陆交货,美金交易。原装现货库存。	询价
深圳市壹芯创科技有限公司	APT5010B2	APT	22+	原厂原封	8200	原装现货库存.价格优势!!	询价
深圳市威尔健半导体有限公司	APT5010B2VFRG	JINGDAO/晶导微	23+	MBS	69820	终端可以免费供样,支持BOM配单!	询价
标准国际(香港)有限公司	APT5010B2VRG	MICROSEMI PPGS	25+		60	公司优势库存热卖中!	询价
现代芯城（深圳）科技有限公司	APT5010B2VRG		24+	N/A	53000	一级代理-主营优势-实惠价格-不悔选择	询价
深圳市河锋鑫科技有限公司	APT5010B2LL	APTMICROSEMI	17+	T-MAXB2	31518	原装正品可含税交易	询价
深圳市芯泽盛世科技有限公司	APT5010B2LLG	MICROCHIP	25+		20000	原厂微芯渠道.全新原装!	询价
深圳市华来深电子有限公司	APT5010B2VFR	APT	23+	TO247	8560	受权代理!全新原装现货特价热卖!	询价
深圳市宏捷佳电子科技有限公司	APT5010B2VRG	APT	25+	T-MAX	12300	独立分销商公司只做原装诚心经营免费试样正品保证	询价
深圳市威雅利发展有限公司	APT5010B2FLL	APT	07+	T-MAX	450	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价

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APT5010B2价格

APT5010B2产品属性

APT5010B2供应商更多...

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APT5010B2规格书下载地址

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