位置：首页 > IC中文资料第4070页 > APT30M40LVRG
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. | ADPOW |   | ||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast | ADPOW | | ||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery Body | ADPOW | | ||
POWER MOS V FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery Body | ADPOW | | ||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.. • Fas | ADPOW | |
APT30M40LVRG产品属性
- 类型
描述
- 型号
APT30M40LVRG
- 功能描述
MOSFET N-CH 300V 76A TO-264
- RoHS
是
- 类别
分离式半导体产品 >> FET - 单
- 系列
POWER MOS V®
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道，金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
APT |
23+ |
MODULE |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
MICROSEMI |
专业模块 |
MODULE |
8513 |
模块原装主营-可开原型号增税票 |
|||
APT |
23+ |
TO-3P |
3000 |
专做原装正品,假一罚百! |
|||
APT |
22+ |
TO-3PL |
8000 |
原装正品支持实单 |
|||
APT |
25+ |
30A/600V/MOS |
50 |
全新原装、诚信经营、公司现货销售! |
|||
APT |
24+ |
8866 |
|||||
APT |
22+ |
原厂原封 |
8200 |
原装现货库存.价格优势!! |
|||
APT |
2023+ |
MODULE |
124 |
主打螺丝模块系列 |
|||
APT |
2447 |
TO-3P |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
APT |
23+ |
MODULE |
7300 |
专注配单,只做原装进口现货 |
APT30M40LVRG规格书下载地址
APT30M40LVRG参数引脚图相关
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DdatasheetPDF页码索引
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