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APT25GR120B价格
参考价格：￥23.8325
型号：APT25GR120B 品牌：Microsemi 备注：这里有APT25GR120B多少钱，2025年最近7天走势，今日出价，今日竞价，APT25GR120B批发/采购报价，APT25GR120B行情走势销售排行榜，APT25GR120B报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
APT25GR120B | Power Semiconductors Power Modules RF Power MOSFETs POWER MOS 7® MOSFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses alon | Microsemi 美高森美 |   | |
APT25GR120B | Power Semiconductors Power Modules 文件：2.83336 Mbytes Page：44 Pages | Microsemi 美高森美 | | |
APT25GR120B | 封装/外壳：TO-247-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IGBT 1200V 75A 521W TO247 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | Microchip 微芯科技 | | |
APT25GR120B | NPT IGBT & Trench IGBT | Microchip 微芯科技 | | |
IGBT DESCRIPTION · Low Saturation Voltage · High Frequency Switching · Ultra Low Leakage Current APPLICATIONS · Industrial Power Supplies · Industrial Drives · Solar Inverters | ISC 无锡固电 | | ||
Power Semiconductors Power Modules RF Power MOSFETs POWER MOS 7® MOSFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses alon | Microsemi 美高森美 | | ||
Power Semiconductors Power Modules RF Power MOSFETs POWER MOS 7® MOSFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses alon | Microsemi 美高森美 | | ||
Power Semiconductors Power Modules 文件：2.83336 Mbytes Page：44 Pages | Microsemi 美高森美 | | ||
NPT IGBT & Trench IGBT | Microchip 微芯科技 | | ||
NPT IGBT & Trench IGBT | Microchip 微芯科技 | | ||
封装/外壳：TO-247-3 包装：管件 描述：IGBT 1200V 75A 521W TO247 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | Microsemi 美高森美 | | ||
Power Semiconductors Power Modules 文件：2.83336 Mbytes Page：44 Pages | Microsemi 美高森美 | | ||
Power Semiconductors Power Modules RF Power MOSFETs POWER MOS 7® MOSFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses alon | Microsemi 美高森美 | | ||
Ultra Fast NPT IGBT DESCRIPTION · Low Saturation Voltage:VCE(sat)=3.2V@IC=25A · Easy Paralleling · Integrated Gate Resistor: Low EMI, High Reliability · Low Saturation Voltage · Short Circuit Withstand Rated · High Frequency Switching APPLICATIONS ·Welding, Inductive Heating ·Solar Inverters ·SMPS, Motor dr | ISC 无锡固电 | | ||
Power Semiconductors Power Modules 文件：2.83336 Mbytes Page：44 Pages | Microsemi 美高森美 | |
APT25GR120B产品属性
- 类型
描述
- 型号
APT25GR120B
- 制造商
Microsemi Corporation
- 功能描述
POWER IGBT TRANSISTOR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Microch |
20+ |
NA |
33560 |
原装优势主营型号-可开原型号增税票 |
|||
MICROSEMI |
638 |
原装正品 |
|||||
Microsemi Corporation |
22+ |
TO247 |
9000 |
原厂渠道,现货配单 |
|||
MICROCHIP |
23+ |
7300 |
专注配单,只做原装进口现货 |
||||
Microchip Technology |
25+ |
TO-247-3 |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
MICROSEMI/美高森美 |
23+ |
TO-268-3D3Pak2TO-268 |
8000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
24+ |
N/A |
56000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
MICROSEMI |
25+ |
TO-247 |
326 |
就找我吧!--邀您体验愉快问购元件! |
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APT25GR120B规格书下载地址
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DdatasheetPDF页码索引
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