| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
APT20GF120BRD | The Fast IGBT??is a new generation of high voltage power IGBTs. The Fast IGBT™ is a new generation of high voltage power IGBTs. Using NonPunch Through Technology the Fast IGBT™ combined with an APT free wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed. • Low Forward Voltage Drop • High Freq. Switching to | ADPOW |   | |
FAST IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed. • Low Forward Voltage Drop • High Freq. Switching to | ADPOW | | ||
FAST IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed. • Low Forward Voltage Drop • High Freq. Switching to | ADPOW | | ||
封装/外壳：TO-247-3 包装：管件 描述：IGBT NPT COMBI 1200V 20A TO-247 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | MICROCHIP 微芯科技 | | ||
FAST IGBT & FRED | APT 晶科电子 | | ||
IGBT 1200V 36A 200W TO247 | MICROCHIP 微芯科技 | | ||
封装/外壳：TO-247-3 包装：管件 描述：IGBT 1200V 36A 200W TO247 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | MICROSEMI 美高森美 | | ||
The Fast IGBT is a new generation of high voltage power IGBTs. Fast IGBT The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage. • Low Forward Voltage Drop • High Freq. Switching to 20KHz • Low Tail Current • Ultr | ADPOW | | ||
The Fast IGBT is a new generation of high voltage power IGBTs. Fast IGBT The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage. • Low Forward Voltage Drop • High Freq. Switching to 20KHz • Low Tail Current • Ultr | ADPOW | | ||
Power Semiconductors Power Modules 文件：2.83336 Mbytes Page：44 Pages | MICROSEMI 美高森美 | |
APT20GF120BRD产品属性
- 类型
描述
- 电压 - 集射极击穿（最大值）：
1200V
- 电流 - 集电极（Ic）（最大值）：
36A
- 脉冲电流 - 集电极 (Icm)：
64A
- 不同 Vge，Ic 时的 Vce（on）：
3.2V @ 15V，15A
- 功率 - 最大值：
200W
- 开关能量：
895µJ（开），840µJ（关）
- 输入类型：
标准
- 栅极电荷：
100nC
- 25°C 时 Td（开/关）值：
10ns/120ns
- 测试条件：
800V，15A，4.3 欧姆，15V
- 工作温度：
-55°C ~ 150°C（TJ）
- 安装类型：
通孔
- 封装/外壳：
TO-247-3
- 供应商器件封装：
TO-247 [B]
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Microch |
20+ |
NA |
33560 |
原装优势主营型号-可开原型号增税票 |
|||
Microsemi Corporation |
22+ |
TO247 [B] |
9000 |
原厂渠道,现货配单 |
|||
APT |
26+ |
模块 |
3562 |
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订 |
|||
APT |
25+ |
模块 |
9630 |
我们只做原装正品现货!量大价优! |
|||
APT |
23+ |
模块 |
420 |
全新原装正品,量大可订货!可开17%增值票!价格优势! |
|||
APT |
24+ |
28 |
|||||
APT |
26+ |
320 |
现货供应 |
||||
Microsemi Corporation |
25+ |
TO-247-3 |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
APT |
22+ |
原厂原封 |
8200 |
原装现货库存.价格优势!! |
|||
APT |
23+ |
TO-59 |
8510 |
原装正品代理渠道价格优势 |
APT20GF120BRD芯片相关品牌
APT20GF120BRD规格书下载地址
APT20GF120BRD参数引脚图相关
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- APT20GN60SDQ1
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APT20GF120BRD数据表相关新闻
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DdatasheetPDF页码索引
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