The Fast IGBT??is a new generation of high voltage power IGBTs.

The Fast IGBT™ is a new generation of high voltage power IGBTs. Using NonPunch Through Technology the Fast IGBT™ combined with an APT free wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed. • Low Forward Voltage Drop • High Freq. Switching to

FAST IGBT & FRED

The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed. • Low Forward Voltage Drop • High Freq. Switching to

FAST IGBT & FRED

The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed. • Low Forward Voltage Drop • High Freq. Switching to

封装/外壳：TO-247-3 包装：管件 描述：IGBT NPT COMBI 1200V 20A TO-247 分立半导体产品 晶体管 - UGBT、MOSFET - 单

封装/外壳：TO-247-3 包装：管件 描述：IGBT 1200V 36A 200W TO247 分立半导体产品 晶体管 - UGBT、MOSFET - 单

The Fast IGBT is a new generation of high voltage power IGBTs.

Fast IGBT The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage. • Low Forward Voltage Drop • High Freq. Switching to 20KHz • Low Tail Current • Ultr

The Fast IGBT is a new generation of high voltage power IGBTs.

Fast IGBT The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage. • Low Forward Voltage Drop • High Freq. Switching to 20KHz • Low Tail Current • Ultr

Power Semiconductors Power Modules

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