isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 22A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.57Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

POWER MOS 7 FREDFET

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FREDFETs

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

POWER MOS 7™ Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TMby significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along wit

POWER MOS 7 FREDFET

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Low Cost and Low Power I2C RTC Real Time Clock/Calendar

Low Power and Low Cost RTC with Alarm Function and Dual IRQ pins The ISL12057 device is a low power real time clock that is pin compatible and functionally equivalent to Maxim DS1337 with clock/calendar and alarm function. The oscillator uses an external, low-cost 32.768kHz crystal. The real tim

Wideband RF Impedance Matching Transformers

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