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APT12057B2LLG

MOSFET

ROHS

MICROCHIP

微芯科技

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 22A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.57Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 22A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.57Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

ISC

无锡固电

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

POWER MOS 7™ Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TMby significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along wit

ADPOW

POWER MOS 7 FREDFET

文件:169.09 Kbytes Page:5 Pages

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APT12057B2LLG产品属性

  • 类型

    描述

  • 型号

    APT12057B2LLG

  • 制造商

    Microsemi Corporation

  • 功能描述

    Trans MOSFET N-CH 1.2KV 22A 3-Pin(3+Tab) T-MAX

  • 制造商

    Microsemi Corporation

  • 功能描述

    MOSFET N-CH 1200V 22A T-MAX

更新时间:2026-8-2 11:50:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
APT
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模块
3562
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5000
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75000
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APT
23+
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8510
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APT
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模块
420
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APT
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28
Microsemi
25+
电联咨询
7800
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Microsemi Corporation
22+
TO2473
9000
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APT
22+
模块
8200
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APT
25+
模块
9630
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