isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.53Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

High Voltage Power MOSFETS

12 Watts, 2.0 GHz GOLDMOS Field Effect Transistor

Description The PTF 10053 is a 12–watt GOLDMOS FET intended for large signal applications from 1.0 to 2.0 GHz. It operates at 40 efficiency with 12 dB typical gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. • Guaranteed Performance

LED Displays Numeric 7-segment

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Light modulation photo IC

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Bluetooth / BLE / Wi-Fi / Zigbee Embedded Antenna

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