虚拟静态随机存取记忆体(PSRAM)

CellularRAM™ products are high-speed, CMOS pseudo-static random access memory developed for low-power, portable applications. The 256Mb device has a DRAM core organized as 16 Meg x 16 bits. The 128Mb device has a DRAM core organized as 8 Meg x 16 bits. The 64Mb device has a DRAM core organized as 4 • Fully compliant to CellularRAM 1.5 Specification\n• VCC, VCCQ voltages:\n• 1.7V-1.95V VCCQ\n• Burst mode READ and WRITE access: 4, 8, 16, or 32 words, or continuous burst Burst wrap or sequential\n• Burst initial latency: 37.5ns(5 clocks)at 133 MHz\n• Low power consumption: Asynchronous READ: <25m;

DC/DC Converter Applications

DC / DC Converter Applications Features • Adoption of MBIT processes. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm). • High allowable power dissip

Typical Performance Characteristics

Typical Performance Characteristics APPLICATION - Suitd for percision circuits, Requiring stable dielectric characteristics: • Negligible dependence of capacitance and dissipation factor on time, voltage, and frequency.

3.2x1.6mm SMD CHIP LED LAMPS

[Kingbright] Description The Bright Red source color devices are made with Gallium Phosphide Red Light Emitting Diode. The Super Bright Green source color devices are made with Gallium Phosphide Green Light Emitting Diode. The High Efficiency Red source color devices are made with Gallium Arse

3.2x1.6mm SMD CHIP LED LAMPS

[Kingbright] Description The Bright Red source color devices are made with Gallium Phosphide Red Light Emitting Diode. The Super Bright Green source color devices are made with Gallium Phosphide Green Light Emitting Diode. The High Efficiency Red source color devices are made with Gallium Arse

150mA MicroPower??LDO with PowerOK

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