Dual Enhancement Mode MOSFET (N-and P-Channel)

Features • N-Channel 20V/15A, RDS(ON)=12mΩ(typ.) @ VGS=10V RDS(ON)=17mΩ(typ.) @ VGS=4.5V • P-Channel -20V/-6A, RDS(ON)=30mΩ(typ.) @ VGS=-4.5V RDS(ON)=45mΩ(typ.) @ VGS=-2.5V • Super High Dense Cell Design for Extremely Low RDS(ON) • Reliable

Dual Enhancement Mode MOSFET (N-and P-Channel)

Features • N-Channel 20V/15A, RDS(ON)=12mΩ(typ.) @ VGS=10V RDS(ON)=17mΩ(typ.) @ VGS=4.5V • P-Channel -20V/-6A, RDS(ON)=30mΩ(typ.) @ VGS=-4.5V RDS(ON)=45mΩ(typ.) @ VGS=-2.5V • Super High Dense Cell Design for Extremely Low RDS(ON) • Reliable

Dual Enhancement Mode MOSFET (N-and P-Channel)

Features • N-Channel 20V/15A, RDS(ON)=12mΩ(typ.) @ VGS=10V RDS(ON)=17mΩ(typ.) @ VGS=4.5V • P-Channel -20V/-6A, RDS(ON)=30mΩ(typ.) @ VGS=-4.5V RDS(ON)=45mΩ(typ.) @ VGS=-2.5V • Super High Dense Cell Design for Extremely Low RDS(ON) • Reliable

Dual Enhancement Mode MOSFET (N-and P-Channel)

Features • N-Channel 20V/9A, RDS(ON) =12mΩ(typ.) @ VGS = 4.5V RDS(ON) =18mΩ(typ.) @ VGS = 2.5V • P-Channel -20V/-6A, RDS(ON) =30mΩ(typ.) @ VGS =-4.5V RDS(ON) =50mΩ(typ.) @ VGS =-2.5V • Super High Dense Cell Design • Reliable and Rugged • Lead Free

RS232/423 Low Cap, #24-7c, FPE, O/A FoilBraid, PVC Jkt, CM

Product Description Computer EIA RS-232/423 Cable, 24 AWG stranded (7x32) tinned copper conductors, Datalene® insulation, overall Beldfoil® (100 coverage) + tinned copper braid shield (65 coverage), drain wire, PVC jacket.

Simple Drive Requirement, Full Bridge Application on LCD Monitor Inverter

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