P-Channel Enhancement Mode MOSFET

P-Channel Enhancement Mode MOSFET Features • -30V/-4.6A, RDS(ON) = 52mΩ(typ.) @ VGS= -10V RDS(ON) = 80mΩ(typ.) @ VGS= -4.5V • Super High Density Cell Design • Reliable and Rugged • SO-8 Package Applications • Power Management in Notebook Computer, Port

P-Channel Enhancement Mode MOSFET

N-Channel Enhancement Mode MOSFET Features •-30V/-4.6A , RDS(ON)=52mΩ(typ.) @ VGS=-10V RDS(ON)=80mΩ(typ.) @ VGS=-4.5V •Super High Dense Cell Design •Reliable and Rugged •Lead Free Available (RoHS Compliant) Applications •Power Management in Notebook Compute

P-Channel Enhancement Mode MOSFET

N-Channel Enhancement Mode MOSFET Features •-30V/-4.6A , RDS(ON)=52mΩ(typ.) @ VGS=-10V RDS(ON)=80mΩ(typ.) @ VGS=-4.5V •Super High Dense Cell Design •Reliable and Rugged •Lead Free Available (RoHS Compliant) Applications •Power Management in Notebook Compute

P-Channel 30-V (D-S) MOSFET

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P-Channel Enhancement Mode Power MOSFET

DESCRIPTION The 9435 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = -30V,ID = -5.1A RDS(ON)

SOP-8 Plastic-Encapsulate MOSFETS

Description The 9435 uses advanced trench technology to provide excellent RDS , low gate charge and operation with gate voltages as low as 4.5V. General Features VDS = -30V RDS

MACHINE SCREW PAN PHILLIPS 10-32

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20V P-Channel Increased MOS FET

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P-Channel 30-V (D-S) MOSFET

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