DualN-ChannelEnhancementModeMOSFET

Features ·30V/6A, RDS(ON)=21mW(typ.)@VGS=10V RDS(ON)=27mW(typ.)@VGS=4.5V ·SuperHighDenseCellDesign ·ReliableandRugged ·LeadFreeAvailable(RoHSCompliant) Applications ·PowerManagementinNotebookComputer,PortableEquipmentandBatteryPowere

DualN-ChannelEnhancementModeMOSFET

Features •30V/6A,RDS(ON)=21mΩ(typ.)@VGS=10V RDS(ON)=27mΩ(typ.)@VGS=4.5V •SuperHighDenseCellDesignforExtremely LowRDS(ON) •ReliableandRugged •SO-8Package Applications •PowerManagementinNotebookComputer,PortableEquipmentandBattery

DualN-ChannelEnhancementModeMOSFET

Features ·30V/6A, RDS(ON)=21mW(typ.)@VGS=10V RDS(ON)=27mW(typ.)@VGS=4.5V ·SuperHighDenseCellDesign ·ReliableandRugged ·LeadFreeAvailable(RoHSCompliant) Applications ·PowerManagementinNotebookComputer,PortableEquipmentandBatteryPowere

DualN-Channel30-V(D-S)MOSFET

文件：1.027339 Mbytes Page：9 Pages

150mA,LowQuiescentCurrent,FastTransientLowDropoutLinearRegulator

Description TheAP7313isa150mA,fixedoutputvoltage,lowdropoutlinearregulator.Thedeviceincludedpasselement,erroramplifier,band-gap,currentlimitandthermalshutdowncircuitry. Features •150mALowDropoutRegulatorin3-pinpackage •VerylowIQoverfullload:65µA

TouchpanelswithSTN/FSTNorTFTdisplay

文件：355.73 Kbytes Page：17 Pages

DialThicknessGages

文件：95.96 Kbytes Page：1 Pages

Wire-Thread-Inserts

文件：102.37 Kbytes Page：3 Pages