N-Channel Enhancement Mode MOSFET

Features • 25V/16A, RDS(ON)=7.5mΩ(typ.) @ VGS=10V RDS(ON)=10mΩ(typ.) @ VGS=4.5V • Super High Dense Cell Design • Avalanche Rated • Reliable and Rugged • Thermal Pad Exposed with Standard SOP-8 Outline • Lead Free Available (RoHS Compliant) Applications • Power

N-Channel Enhancement Mode MOSFET

• 25V/16A,\n   RDS(ON)=7.5mΩ(typ.) @ VGS=10V\n   RDS(ON)=10mΩ(typ.) @ VGS=4.5V\n• Super High Dense Cell Design\n• Avalanche Rated\n• Reliable and Rugged\n• Thermal Pad Exposed with Standard SOP-8 Outline\n• Lead Free Available (RoHS Compliant)Applications\n• Power Management in Notebook Computer, Po;

N-Channel Enhancement Mode MOSFET

Features • 25V/16A, RDS(ON)=7.5mΩ(typ.) @ VGS=10V RDS(ON)=10mΩ(typ.) @ VGS=4.5V • Super High Dense Cell Design • Avalanche Rated • Reliable and Rugged • Thermal Pad Exposed with Standard SOP-8 Outline • Lead Free Available (RoHS Compliant) Applications • Power

N-Channel Enhancement Mode MOSFET

Features • 25V/16A, RDS(ON)=7.5mΩ(typ.) @ VGS=10V RDS(ON)=10mΩ(typ.) @ VGS=4.5V • Super High Dense Cell Design • Avalanche Rated • Reliable and Rugged • Thermal Pad Exposed with Standard SOP-8 Outline • Lead Free Available (RoHS Compliant) Applications • Power

N-Channel Enhancement Mode MOSFET

Features • 25V/16A, RDS(ON)=7.5mΩ(typ.) @ VGS=10V RDS(ON)=10mΩ(typ.) @ VGS=4.5V • Super High Dense Cell Design • Avalanche Rated • Reliable and Rugged • Thermal Pad Exposed with Standard SOP-8 Outline • Lead Free Available (RoHS Compliant) Applications • Power

N-Channel Enhancement Mode MOSFET

Features • 25V/16A, RDS(ON)=7.5mΩ(typ.) @ VGS=10V RDS(ON)=10mΩ(typ.) @ VGS=4.5V • Super High Dense Cell Design • Avalanche Rated • Reliable and Rugged • Thermal Pad Exposed with Standard SOP-8 Outline • Lead Free Available (RoHS Compliant) Applications • Power

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • High reliability, achieved by the DHD structure • Allowing to insert to a 5 mm pitch hole • Finely divided zener-voltage rank • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 39 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • High reliability, achieved by the DHD structure • Allowing to insert to a 5 mm pitch hole • Finely divided zener-voltage rank • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 39 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • High reliability, achieved by the DHD structure • Allowing to insert to a 5 mm pitch hole • Finely divided zener-voltage rank • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 39 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Extremely low noise voltage caused from diode (1/3 to 1/10 of our conventional MAZ4000 series) • Extremely good rising performance (in the low-current range) • Easy-to-identify the zener-voltage rank by the color bands • Easy

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Extremely low noise voltage caused from diode (1/3 to 1/10 of our conventional MAZ4000 series) • Extremely good rising performance (in the low-current range) • Easy-to-identify the zener-voltage rank by the color bands • Easy