N-Channel Enhancement Mode MOSFET

N-Channel Enhancement Mode MOSFET Features • 30V/15A, RDS(ON)=48mΩ(typ.) @ VGS =10V RDS(ON)=75mΩ(typ.) @ VGS=4.5V •Super High Dense Cell Design •High Power and Current Handling Capability •TO-252 and SOT-223 Package Applications • Switching Regulators

N-Channel MOSFET uses advanced trench technology

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N-Channel Enhancement Mode MOSFET

N-Channel Enhancement Mode MOSFET Features • 30V/15A, RDS(ON)=48mΩ(typ.) @ VGS =10V RDS(ON)=75mΩ(typ.) @ VGS=4.5V •Super High Dense Cell Design •High Power and Current Handling Capability •TO-252 and SOT-223 Package Applications • Switching Regulators

N-Channel 30-V (D-S) MOSFET

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MULTIPLEXED TWO-WIRE HALL-EFFECT SENSOR ICs

The A3054KU and A3054SU Hall-effect sensors are digital magnetic sensing ICs capable of communicating over a two-wire power/signal bus. Using a sequential addressing scheme, the device responds to a signal on the bus and returns the diagnostic status of the IC, as well as the status of each monito

WASHERS AND NUTS

[KEYSTONE] FIBRE SHOULDER WASHERS HEX MACHINE NUTS NYLON SHOULDER WASHER/BUSHINGS BLIND CAPTIVE NUTS - PRESS FIT METRIC MACHINE NUTS

MULTIPLEXED TWO-WIRE HALL-EFFECT SENSOR ICs

The A3054KU and A3054SU Hall-effect sensors are digital magnetic sensing ICs capable of communicating over a two-wire power/signal bus. Using a sequential addressing scheme, the device responds to a signal on the bus and returns the diagnostic status of the IC, as well as the status of each monito

Notch filter 252 KHz Notch Frequency 50 ??SMA Connectors

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Manual Step, Ruggedized SMA Connectors

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