P-Channel Enhancement Mode MOSFET

Features • -20V/-1.8A, RDS(ON)=108mΩ(typ.) @ VGS=-4.5V RDS(ON)=135mΩ(typ.) @ VGS=-2.5V • Super High Dense Cell Design for Extremely Low RDS(ON) • Reliable and Rugged • SOT-23 Package Applications • Power Management in Notebook Computer, Portable Equip

P-Channel Enhancement Mode MOSFET

Features • -20V/-1.8A, RDS(ON)=108mΩ(typ.) @ VGS=-4.5V RDS(ON)=135mΩ(typ.) @ VGS=-2.5V • Super High Dense Cell Design for Extremely Low RDS(ON) • Reliable and Rugged • SOT-23 Package Applications • Power Management in Notebook Computer, Portable Equip

Silicon NPN Transistor High Speed Switch

Description: The NTE2313 is a high–voltage, high–speed, glass–passivated NPN power transistor in a TO220 type package designed for use in converters, inverters, switching regulators, motor control systems, and switching applications.

4-Channel Audio Processor IC

Description PT2313L is a four-channel digital control audio processor utilizing CMOS Technology. Volume, Bass, Treble and Balance, Front/Rear Fader Processor are incorporated into a single chip. Loudness Function and Selectable Input Gain are also provided to build a highly effective electronic

4-Channel Audio Processor IC

Description PT2313L is a four-channel digital control audio processor utilizing CMOS Technology. Volume, Bass, Treble and Balance, Front/Rear Fader Processor are incorporated into a single chip. Loudness Function and Selectable Input Gain are also provided to build a highly effective electronic

PLLatinum??Ultra Low Power Frequency Synthesizer for RF Personal Communications

文件：662.5 Kbytes Page：29 Pages

200 4-CHARACTER 5X7 DOT MATRIX SERIAL INPUT ALPHANUMERIC MILITARY DISPLAY

文件：413.6 Kbytes Page：11 Pages