N-Channel Enhancement Mode MOSFET

Features • 16V/5A , RDS(ON)=35mΩ(typ.) @ VGS=4.5V RDS(ON)=45mΩ(typ.) @ VGS=2.5V RDS(ON)=60mΩ(typ.) @ VGS=1.8V • Super High Dense Cell Design for Extremely Low RDS(ON) • Reliable and Rugged • SOT-23 Package Applications • Power Management in Notebook Comput

N-Channel Enhancement Mode MOSFET

N-Channel Enhancement Mode MOSFET

Features • 16V/5A , RDS(ON)=35mΩ(typ.) @ VGS=4.5V RDS(ON)=45mΩ(typ.) @ VGS=2.5V RDS(ON)=60mΩ(typ.) @ VGS=1.8V • Super High Dense Cell Design for Extremely Low RDS(ON) • Reliable and Rugged • SOT-23 Package Applications • Power Management in Notebook Comput

N-Channel Enhancement Mode MOSFET

Features • 16V/5A , RDS(ON)=35mΩ(typ.) @ VGS=4.5V RDS(ON)=45mΩ(typ.) @ VGS=2.5V RDS(ON)=60mΩ(typ.) @ VGS=1.8V • Super High Dense Cell Design for Extremely Low RDS(ON) • Reliable and Rugged • SOT-23 Package Applications • Power Management in Notebook Comput

N-Channel MOSFET

9-bit 20MSPS Video A/D Converter

Description The CXD2312R is a 9-bit CMOS A/D converter for video applications. This IC is ideally suited for the A/D conversion of video signals in TVs, VCRs, camcorders, etc. Features • Resolution: 9-bit ±0.5 LSB (D.L.E.) • Maximum sampling frequency: 20MSPS • Low power consumption: 130mW (a

Silicon NPN Transistor High Voltage, High Speed Switch

Description: The NTE2312 is a silicon NPN transistor in a TO220 type package designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. This device is particularly suited for 115V and 220V switch–mode applications such as switching regulators, inverter

LINEAR GENERAL PURPOSE AMPLIFIER

Product Description The RF2312 is a general purpose, low cost high linearity RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Tran sistor (HBT) process, and has been designed for use as an easily cascadable 75Ωgain block. The gain flatness of

LINEAR GENERAL PURPOSE AMPLIFIER

Product Description The RF2312 is a general purpose, low cost high linearity RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Tran sistor (HBT) process, and has been designed for use as an easily cascadable 75Ωgain block. The gain flatness of

PLLatinum??Ultra Low Power Frequency Synthesizer for RF Personal Communications

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