P-Channel Enhancement Mode MOSFET

Features • -30V/-3A , RDS(ON)=100mΩ(typ.) @ VGS=-10V RDS(ON)=140mΩ(typ.) @ VGS=-4.5V • Super High Dense Cell Design for Extremely Low RDS(ON) • Reliable and Rugged • SOT-23 Package Applications • Power Management in Notebook Computer, Portable Equipmen

P-Channel Enhancement Mode MOSFET

P-Channel Enhancement Mode MOSFET

Features • -30V/-3A , RDS(ON)=100mΩ(typ.) @ VGS=-10V RDS(ON)=140mΩ(typ.) @ VGS=-4.5V • Super High Dense Cell Design for Extremely Low RDS(ON) • Reliable and Rugged • SOT-23 Package Applications • Power Management in Notebook Computer, Portable Equipmen

MICROWAVE CW BIPOLAR

[ACRIAN INC] GENERAL DESCRIPTION The 2307 is a common base transistor capable of providing 7 Watts CW RF output power at 2300 MHz. This hermetically sealed transistor is specifically designed for telemetry and telcommunications applications. It uiilizes gold metalilzation and diffused ballasting

7.0 Watts - 20 Volts, Class C Microwave 2300 MHz

GENERAL DESCRIPTION The 2307 is a COMMON BASE transistor capable of providing 7 Watts Class C, RF output power at 2300 MHz. Gold metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. The transistor uses a fully hermetic High Temperature Solder Sealed pa

Pneumatic muffler

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Nylon Hose Clamps

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3M??Masking Tape 2307

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