P-Channel Enhancement Mode MOSFET

Features • -20V/-3A, RDS(ON)=72mΩ(typ.) @ VGS=-4.5V RDS(ON)=98mΩ(typ.) @ VGS=-2.5V • Super High Dense Cell Design • Reliable and Rugged • Lead Free Available (RoHS Compliant) Applications • Power Management in Notebook Computer, Portable Equipment and Battery Powe

P-Channel Enhancement Mode MOSFET

P-Channel Enhancement Mode MOSFET

• -20V/-3A,\n    RDS(ON)=72mΩ(typ.) @ VGS=-4.5V\n    RDS(ON)=98mΩ(typ.) @ VGS=-2.5V\n• Super High Dense Cell Design\n• Reliable and Rugged\n• Lead Free Available (RoHS Compliant)Applications\n• Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems. ;

P-Channel Enhancement Mode MOSFET

Features • -20V/-3A, RDS(ON)=72mΩ(typ.) @ VGS=-4.5V RDS(ON)=98mΩ(typ.) @ VGS=-2.5V • Super High Dense Cell Design • Reliable and Rugged • Lead Free Available (RoHS Compliant) Applications • Power Management in Notebook Computer, Portable Equipment and Battery Powe

P-Channel Enhancement Mode MOSFET

Features • -20V/-3A, RDS(ON)=72mΩ(typ.) @ VGS=-4.5V RDS(ON)=98mΩ(typ.) @ VGS=-2.5V • Super High Dense Cell Design • Reliable and Rugged • Lead Free Available (RoHS Compliant) Applications • Power Management in Notebook Computer, Portable Equipment and Battery Powe

P-Channel Enhancement Mode MOSFET

Features • -20V/-3A, RDS(ON)=72mΩ(typ.) @ VGS=-4.5V RDS(ON)=98mΩ(typ.) @ VGS=-2.5V • Super High Dense Cell Design • Reliable and Rugged • Lead Free Available (RoHS Compliant) Applications • Power Management in Notebook Computer, Portable Equipment and Battery Powe

P-Channel Enhancement Mode MOSFET

Features • -20V/-3A, RDS(ON)=72mΩ(typ.) @ VGS=-4.5V RDS(ON)=98mΩ(typ.) @ VGS=-2.5V • Super High Dense Cell Design • Reliable and Rugged • Lead Free Available (RoHS Compliant) Applications • Power Management in Notebook Computer, Portable Equipment and Battery Powe

20 V, P-channel enhancement mode MOSFET

Silicon NPN Transistor High Voltage Horizontal Output

Description: The NTE2301 is a silicon NPN power transistor in a TO218 type package designed for use in large screen deflection circuits. Features: • Collector–Emitter Voltage: VCEX = 1500V • Glassivated Base–Collector Junction • Safe Operating Area @ 50µs = 20A, 400V • Switchin

Reflective Photosensor

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PLLatinumTM 160 MHz Frequency Synthesizer for RF Personal Communications

文件：225.65 Kbytes Page：14 Pages

PLLatinumTM 160 MHz Frequency Synthesizer for RF Personal Communications

文件：225.65 Kbytes Page：14 Pages

EXCALIBUR 3-STATE-OUTPUT WIDE-BANDWIDTH POWER OPERATIONAL AMPLIFIER

文件：324.91 Kbytes Page：22 Pages