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型号 功能描述 生产厂家 企业 LOGO 操作
APM2030

N-Channel Enhancement Mode MOSFET

Features • 20V/6A , RDS(ON)=35mΩ(typ.) @ VGS=4.5V RDS(ON)=38mΩ(typ.) @ VGS=2.5V •Super High Dense Cell Design for Extremely Low RDS(ON) •Reliable and Rugged •TO-252 Package

ANPEC

茂达电子

APM2030

N-Channel Enhancement Mode MOSFET

ANPEC

茂达电子

N-Channel Enhancement Mode MOSFET

Features • 20V/6A , RDS(ON)=35mΩ(typ.) @ VGS=4.5V RDS(ON)=38mΩ(typ.) @ VGS=2.5V •Super High Dense Cell Design for Extremely Low RDS(ON) •Reliable and Rugged •TO-252 Package

ANPEC

茂达电子

N-Channel Enhancement Mode MOSFET

• 20V/6A ,RDS(ON)=28mΩ(typ.) @ VGS=4.5V RDS(ON)=38mΩ(typ.) @ VGS=2.5V •Super High Dense Cell Design •Reliable and Rugged •Lead Free Available (RoHS Compliant)

ANPEC

茂达电子

N-Channel Enhancement Mode MOSFET

• 20V/6A ,RDS(ON)=28mΩ(typ.) @ VGS=4.5V RDS(ON)=38mΩ(typ.) @ VGS=2.5V •Super High Dense Cell Design •Reliable and Rugged •Lead Free Available (RoHS Compliant)

ANPEC

茂达电子

N-Channel Enhancement Mode MOSFET

• 20V/6A ,RDS(ON)=28mΩ(typ.) @ VGS=4.5V RDS(ON)=38mΩ(typ.) @ VGS=2.5V •Super High Dense Cell Design •Reliable and Rugged •Lead Free Available (RoHS Compliant)

ANPEC

茂达电子

N-Channel Enhancement Mode MOSFET

• 20V/6A ,RDS(ON)=28mΩ(typ.) @ VGS=4.5V RDS(ON)=38mΩ(typ.) @ VGS=2.5V •Super High Dense Cell Design •Reliable and Rugged •Lead Free Available (RoHS Compliant)

ANPEC

茂达电子

N-Channel Enhancement Mode MOSFET

• 20V/6A ,RDS(ON)=28mΩ(typ.) @ VGS=4.5V RDS(ON)=38mΩ(typ.) @ VGS=2.5V •Super High Dense Cell Design •Reliable and Rugged •Lead Free Available (RoHS Compliant)

ANPEC

茂达电子

N-Channel Enhancement Mode MOSFET

Features • 20V/6A , RDS(ON)=35mΩ(typ.) @ VGS=4.5V RDS(ON)=38mΩ(typ.) @ VGS=2.5V •Super High Dense Cell Design for Extremely Low RDS(ON) •Reliable and Rugged •TO-252 Package

ANPEC

茂达电子

N-Channel Enhancement Mode MOSFET

Features • 20V/6A , RDS(ON)=35mΩ(typ.) @ VGS=4.5V RDS(ON)=38mΩ(typ.) @ VGS=2.5V •Super High Dense Cell Design for Extremely Low RDS(ON) •Reliable and Rugged •TO-252 Package

ANPEC

茂达电子

N-Channel Enhancement Mode MOSFET

• 20V/6A ,RDS(ON)=28mΩ(typ.) @ VGS=4.5V RDS(ON)=38mΩ(typ.) @ VGS=2.5V •Super High Dense Cell Design •Reliable and Rugged •Lead Free Available (RoHS Compliant)

ANPEC

茂达电子

N-Channel Enhancement Mode MOSFET

•  20V/6A ,RDS(ON)=28mΩ(typ.) @ VGS=4.5V\n              RDS(ON)=38mΩ(typ.) @ VGS=2.5V\n•Super High Dense Cell Design\n•Reliable and Rugged\n•Lead Free Available (RoHS Compliant)

ANPEC

茂达电子

N-Channel Enhancement Mode MOSFET

• 20V/6A ,RDS(ON)=28mΩ(typ.) @ VGS=4.5V RDS(ON)=38mΩ(typ.) @ VGS=2.5V •Super High Dense Cell Design •Reliable and Rugged •Lead Free Available (RoHS Compliant)

ANPEC

茂达电子

N-Channel Enhancement Mode MOSFET

• 20V/6A ,RDS(ON)=28mΩ(typ.) @ VGS=4.5V RDS(ON)=38mΩ(typ.) @ VGS=2.5V •Super High Dense Cell Design •Reliable and Rugged •Lead Free Available (RoHS Compliant)

ANPEC

茂达电子

N-Channel Enhancement Mode MOSFET

• 20V/6A ,RDS(ON)=28mΩ(typ.) @ VGS=4.5V RDS(ON)=38mΩ(typ.) @ VGS=2.5V •Super High Dense Cell Design •Reliable and Rugged •Lead Free Available (RoHS Compliant)

ANPEC

茂达电子

N-Channel Enhancement Mode MOSFET

• 20V/6A ,RDS(ON)=28mΩ(typ.) @ VGS=4.5V RDS(ON)=38mΩ(typ.) @ VGS=2.5V •Super High Dense Cell Design •Reliable and Rugged •Lead Free Available (RoHS Compliant)

ANPEC

茂达电子

DECT 500 mW power amplifier

GENERAL DESCRIPTION The CGY2030M is a GaAs Monolithic Microwave Integrated Circuit (MMIC) power amplifier specifically designed to operate at 3.6 V battery supply. When power control is not required, it can be operated without negative supply voltage. FEATURES • Power Amplifier (PA) overall eff

PHILIPS

飞利浦

Integrated Circuit High Voltage Segment Driver for Gas Discharge Tubes

Description: The NTE2030 is capable of driving 8 segments of a high voltage display tube with a constant output sink current, which can be adjusted by external program resistor, Rp. The program current is half that of output “ON” current. In the “OFF” state the outputs can tolerate more than 80

NTE

SCHOTTKY BARRIER RECTIFIERS(VOLTAGE- 20 to 100 Volts CURRENT - 20.0 Ampere)

FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. • Low forwrd voltge, high current capability • High surge capacity. • For

PANJIT

強茂

ISOLATION SCHOTTKY BARRIER RECTIFIERS(VOLTAGE- 20 to 100 Volts CURRENT - 20.0 Ampere)

FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. • Low forwrd voltge, high current capability • High surge capacity. • For

PANJIT

強茂

SCHOTTKY BARRIER RECTIFIERS(20A,30-45V)

SWITCHMODE POWER RECTIFIERS D PAK SURFACE MOUNT POWER PACKAGE The D PAK Power rectifier employs the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art devices have the following features: * Low Forward Voltage * Low Switching noise * High Surge Capacity * Guara

MOSPEC

统懋

APM2030产品属性

  • 类型

    描述

  • 型号

    APM2030

  • 制造商

    ANPEC

  • 制造商全称

    Anpec Electronics Coropration

  • 功能描述

    N-Channel Enhancement Mode MOSFET

更新时间:2026-8-1 13:58:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ANPEC
25+
06+PB
443
百分百原装正品 真实公司现货库存 本公司只做原装 可
ANPEC/茂达电子
26+
TO-252
7500
一级代理优势现货,全新正品直营店
VBsemi
21+
TO252-3
10065
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ANPEC/茂达电子
09+
TO-252-5
3200
全新、原装
Anpec
23+
TO-252
8560
受权代理!全新原装现货特价热卖!
茂达
25+
SOT-252
90000
全新原装现货
ANPEC/茂达电子
24+
SOT-89
9600
原装现货,优势供应,支持实单!
ANPEC茂达
24+
SOT252
66800
原厂授权一级代理,专注汽车、医疗、工业、新能源!
ANPEC/茂达电子
23+
SOT-89
50000
原装正品 支持实单
ANPEC
22+
TO-252
20000
公司只做原装 品质保障

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