Dual-Input, USB/AC Adapter, 1-Cell Li Charger with OVP and Thermal Regulation

General Description The APL3200 charges a single-cell Li+ battery from both USB and AC adapter sources. It also includes battery to-input power switchover, therefore, the system can be powered directly from the power source rather than from the battery. In its simplest application, the APL3200

Battery Charger

Dual-Input, USB/AC Adapter, 1-Cell Li Charger with OVP and Thermal Regulation

General Description The APL3200 charges a single-cell Li+ battery from both USB and AC adapter sources. It also includes battery to-input power switchover, therefore, the system can be powered directly from the power source rather than from the battery. In its simplest application, the APL3200

Dual-Input, USB/AC Adapter, 1-Cell Li Charger with OVP and Thermal Regulation

General Description The APL3200 charges a single-cell Li+ battery from both USB and AC adapter sources. It also includes battery to-input power switchover, therefore, the system can be powered directly from the power source rather than from the battery. In its simplest application, the APL3200

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Mini type package (3-pin) • Allowing to achieve a high-density set • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 36 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Mini type package (3-pin) • Allowing to achieve a high-density set • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 36 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Mini type package (3-pin) • Allowing to achieve a high-density set • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 36 V

DUAL TMOS POWER MOSFET 11.5 AMPERES 20 VOLTS

Medium Power Surface Mount Products TMOS Dual N-Channel Field Effect Transistors WaveFET™ devices are an advanced series of power MOSFETs which utilize Motorola’s latest MOSFET technology process to achieve the lowest possible on–resistance per silicon area. They are capable of withstanding high

1.3 關m Laser-Diode DIP Module

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