3.0 x 1.5mm SURFACE MOUNT LED

3.0 x 1.5mm SURFACE MOUNT LED

3.0x1.5mm SMD CHIP LED LAMP

3.0 x 1.5mm SURFACE MOUNT LED

3.0mmx1.5mm SMD CHIP LED LAMP

Description The Hyper Red source color devices are made with DH InGaAlP on GaAs substrate Light Emitting Diode. Features ● 3.0mmx1.5mm SMT LED, 1.4mm THICKNESS. ● LOW POWER CONSUMPTION. ● WIDE VIEWING ANGLE. ● IDEAL FOR BACKLIGHT AND INDICATOR. ● VARIOUS COLORS AND LENS TYPES AVAILABLE. ●

3.0 x 1.5mm SURFACE MOUNT LED

3.0 x 1.5mm SURFACE MOUNT LED

3.0mmx1.5mm SMD CHIP LED LAMP

Description The Hyper Red source color devices are made with DH InGaAlP on GaAs substrate Light Emitting Diode. Features ● 3.0mmx1.5mm SMT LED, 1.4mm THICKNESS. ● LOW POWER CONSUMPTION. ● WIDE VIEWING ANGLE. ● IDEAL FOR BACKLIGHT AND INDICATOR. ● VARIOUS COLORS AND LENS TYPES AVAILABLE. ●

封装/外壳：2-SMD，无引线 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：LED RED CLEAR CHIP SMD 光电器件 LED 指示 - 分立

发光二极管/LED

Switching Application

Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=2.2KΩ, R2=10KΩ)

N - CHANNEL 30V - 0.013 ohm - 40A - D2PAK/TO-220 STripFETO POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a rema

N - CHANNEL 30V - 0.013 ohm - 40A - D2PAK/TO-220 STripFETO POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a rema

N - CHANNEL 30V - 0.013 ohm - 40A - D2PAK/TO-220 STripFETO POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a rema

SANKEN ELECTRIC COMPANY, LTD.

文件：171.27 Kbytes Page：5 Pages