| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
DirectFET Power MOSFET Description The IRF6619 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout | IRF |   | ||
RF AMPLIFIER MODEL 文件：196.47 Kbytes Page：1 Pages | APITECH | | ||
N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device 文件：58.7 Kbytes Page：7 Pages | SANYO 三洋 | | ||
General-Purpose Switching Device Applications 文件：445.59 Kbytes Page：7 Pages | SANYO 三洋 | | ||
Low Profile (0.7 mm) 文件：287.67 Kbytes Page：10 Pages | IRF | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
NA/ |
6006 |
原装现货,当天可交货,原型号开票 |
|||
IR |
2016+ |
QFN |
3500 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
INFINEON/英飞凌 |
25+ |
DIRECTFET |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
IR |
24+ |
QFN |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
IR |
25+ |
QFN |
860000 |
明嘉莱只做原装正品现货 |
|||
Infineon Technologies |
21+ |
DIRECTFET? MX |
4800 |
100%进口原装!长期供应!绝对优势价格(诚信经营)! |
|||
IR |
21+ |
DIRECTFET |
30000 |
百域芯优势 实单必成 可开13点增值税 |
|||
IR |
2450+ |
NA |
6540 |
只做原装正品现货!或订货假一赔十! |
|||
IR |
23+ |
DirectFETMX |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
IR |
22+ |
QFN |
8000 |
原装正品支持实单 |
AP6619GH芯片相关品牌
AP6619GH规格书下载地址
AP6619GH参数引脚图相关
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- ba028
- b533
- avr单片机
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- at89s52
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- AP7217A
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- AP6641
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- AP-6631
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- AP6612N
- AP6612
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- AP6610S
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- AP-6610
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- AP6608-R95MOG
- AP6608N33M
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2021-7-1
DdatasheetPDF页码索引
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