| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
AP50N10D | 100V N-Channel Enhancement Mode MOSFET | APM |   | |
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 100V, 50A, RDS(ON) = 30mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TO-220 & TO-263 package. ■ Lead free product is acquired. | CET 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 50A, RDS(ON) = 30mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead free product is acquired. | CET-MOS 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 50A, RDS(ON) = 30mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead free product is acquired. | CET-MOS 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 100V, 50A, RDS(ON) = 30mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TO-220 & TO-263 package. ■ Lead free product is acquired. | CET 华瑞 | | ||
N-CHANNEL MOSFET in a TO-220 Plastic Package 文件：866.59 Kbytes Page：6 Pages | FOSHAN 蓝箭电子 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
APM |
25+ |
TO-252-3L |
56468 |
百分百原装现货 实单必成 |
|||
22+ |
TO-252-3L |
20000 |
只做原装 |
||||
APM |
25+ |
TO-252-3L |
880000 |
明嘉莱只做原装正品现货 |
|||
24+ |
N/A |
64000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
500 |
原装现货 |
||||||
APM |
2023+ |
TO-252-3L |
50000 |
AI智能識别、工業、汽車、醫療方案LPC批量及配套一站 |
AP50N10D芯片相关品牌
AP50N10D规格书下载地址
AP50N10D参数引脚图相关
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- AP561
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- AP-5-21
- AP-5-14
- AP-5-13
- AP513
- AP-5-12
- AP512
- AP-5-11
- AP5101
- AP5100W
- AP5100
- AP50X
- AP50T10GP-HF_16
- AP50T10GP-HF_14
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- AP50T10GM-HF_14
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- AP50T10GJ-HF
- AP50T10GI-HF_16
- AP50T10GI-HF_14
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- AP50PN750I
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- AP50GT60SW-HF_14
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- AP50G60W-HF
- AP50G60SW-HF_14
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- AP50AN500P
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2018-12-19
DdatasheetPDF页码索引
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