| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
TMOS POWER FET LOGIC LEVEL 50 AMPERES 60 VOLTS TMOS E-FET Power Field Effect Transistors D2PAK for Surface Mount Logic Level TMOS (L2TMOS) N–Channel Enhancement–Mode Silicon Gate These TMOS Power FETs are designed for high speed, low loss power switching applications such as switching regulators, converters, solenoid and relay drivers. This | MOTOROLA 摩托罗拉 | |||
TMOS POWER FET 42 AMPERES 60 VOLTS TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS E–FET designs, TMOS V is designed to withstand high energy | MOTOROLA 摩托罗拉 | |||
TMOS POWER FET 50 AMPERES 60 VOLTS RDS(on) = 0.028 OHM TMOS E-FET™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed fo | MOTOROLA 摩托罗拉 | |||
TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.032 OHM TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.032 OHM N–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resis tance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and | MOTOROLA 摩托罗拉 | |||
TMOS POWER FET 50 AMPERES 60 VOLTS RDS(on) = 0.028 OHM TMOS E-FET™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed fo | MOTOROLA 摩托罗拉 |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MOT |
05+ |
TO-220 |
3000 |
原装进口 |
|||
N/A |
25+ |
TO220 |
12940 |
只做原装正品假一赔十可含税 |
|||
24+ |
1100 |
真实现货库存 |
|||||
MTP50N06V |
25+ |
15 |
15 |
||||
MOT |
23+24 |
TO-220 |
29840 |
主营MOS管,二极.三极管,肖特基二极管.功率三极管 |
|||
MOTOROLA |
2025+ |
TO220 |
4835 |
全新原厂原装产品、公司现货销售 |
|||
ON/安森美 |
2022+ |
TO-220 |
12888 |
原厂代理 终端免费提供样品 |
|||
VBsemi/台湾微碧 |
25+ |
TO-220 |
20000 |
原装 |
|||
MOTOROLA/摩托罗拉 |
25+ |
TO-220 |
30000 |
全新原装现货,价格优势 |
|||
MOT |
26+ |
TO-220 |
12000 |
原装,正品 |
AP50N06DF芯片相关品牌
AP50N06DF规格书下载地址
AP50N06DF参数引脚图相关
- bc01
- ba028
- b533
- avr单片机
- avl
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- atmega8
- atmega16
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- at89s52
- at89s51
- at89c52
- at89c51
- at89c2051
- as3410
- arm应用
- arm内核
- arm11
- AP5725
- AP5724
- AP562-F
- AP561-F
- AP561
- AP5602P
- AP5600N
- AP560
- AP-5-22
- AP-5-21
- AP-5-14
- AP-5-13
- AP513
- AP-5-12
- AP512
- AP-5-11
- AP5101
- AP5100W
- AP5100
- AP50X
- AP50P03K
- AP50P03DF
- AP50P03D
- AP50P02DF
- AP50P02D
- AP50N25T
- AP50N25P
- AP50N25MP
- AP50N20MP
- AP50N20GH
- AP50N15D
- AP50N15
- AP50N10P
- AP50N10D
- AP50N100K
- AP50N100G
- AP50N06Y
- AP50N06P
- AP50N06NF
- AP50N06K
- AP50N06D
- AP50N06CT
- AP50N06CP
- AP50N06BD
- AP50N06
- AP50N05D
- AP50N04S
- AP50N04QD
- AP50N04K
- AP50N04D
- AP50N03S
- AP50N03P
- AP50N03LP
- AP50N03H
- AP50N03DF
- AP50N03D
- AP50N03AD
- AP50N03
- AP50N02NF
- AP50N02DF
- AP50B10
- AP506G6
- AP5066
- AP50610
- AP5056
- AP504G6
- AP5046
- AP50410
- AP504
- AP503
- AP502G6
- AP5026
- AP50210
- AP502
- AP501
- AP5004
- AP5002
- AP4957M
- AP4955M
- AP4953M
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2018-12-19
DdatasheetPDF页码索引
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