N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. ▼ Simple Drive Requirement ▼ Low On-resistance ▼ Fast Switching Characteristic

N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description\nAdvanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.▼ Simple Drive Requirement\n▼ Low On-resistance\n▼ Fast Switching Characteristic

Simple Drive Requirement

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GaAlAs Red Light Emitting Diode

GaAlAs Red Light Emitting Diode For optical fiber communications and control systems Features ● Red light emission close to monochromatic light : λP = 680 nm ● High-power output, high-efficiency : PO = 3 mW ● High coupling characteristics and suits to a plastic fiber ● High-speed response :

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planar type For general amplification ■ Features • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planer transistor For general amplification ■ Features ● Two elements incorporated into one package. ● Reduction of the mounting area and assembly cost by one half.

FAMILY OF SELF-CALIBRATING Self-CalE PRECISION CMOS RAIL-TO-RAIL OUTPUT OPERATIONAL AMPLIFIERS

文件：498.4 Kbytes Page：32 Pages

FAMILY OF SELF-CALIBRATING Self-CalE PRECISION CMOS RAIL-TO-RAIL OUTPUT OPERATIONAL AMPLIFIERS

文件：498.4 Kbytes Page：32 Pages