N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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N-Channel 60-V (D-S) MOSFET

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N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP2310GN-HF-3TR - 晶体管, MOSFET, N沟道, 3 A, 60 V, 0.07 ohm, 10 V, 1.55 V

The AP2310GN-HF-3TR from Advanced Power Electronics Corp is a surface mount, N channel enhancement mode power MOSFET in SOT-23 package. This MOSFET provide designers with best combination of low resistance, extremely efficient and cost effectiveness. The device is best suited for commercial and indu ·Simple drive requirement\n·Drain to source voltage of 60V\n·Gate to source voltage of ±20V\n·Continuous drain current (Id) of 3A at Vgs 10V and 25°C\n·Power dissipation (pd) of 1.38W\n·Operating junction temperature range from -55°C to 150°C\n·Low on state resistance of 70mohm at Vgs 10V;

Simple Drive Requirement

Simple Drive Requirement, Small Package Outline, Surface Mount Device

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Simple Drive Requirement

文件：100.34 Kbytes Page：4 Pages

Simple Drive Requirement

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Silicon NPN Transistor High Voltage, High Speed Switch

Description: The NTE2310 is a silicon multiepitaxial mesa NPN transistor in a TO218 type package designed for use in high voltage, fast switching industrial applications.

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using Diffused Collector technology for more stable operation Vs base drive circuit variations resulting in very low worst case dissipation. ■ NEW SERIES, ENHANCED PERFORMANCE ■ FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING ■ HIGH VOLTAGE CA

PLLatinum??Ultra Low Power Frequency Synthesizer for RF Personal Communications

文件：662.5 Kbytes Page：29 Pages

PLLatinum??Ultra Low Power Frequency Synthesizer for RF Personal Communications

文件：662.5 Kbytes Page：29 Pages

PLLatinum??Ultra Low Power Frequency Synthesizer for RF Personal Communications

文件：662.5 Kbytes Page：29 Pages