P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, , low on-resistance and cost-effectiveness. The SOT-23 package is universally preferred for all commercial industrial surface mount applications and suited for low voltage applicati

P-Channel 20-V (D-S) MOSFET

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P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Simple Drive Requirement, Small Package Outline

Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The SOT-23 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/

Simple Drive Requirement

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Small Package Outline

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AP2307GN-HF-3TR - 晶体管, MOSFET, P沟道, -4 A, -16 V, 0.06 ohm, -4.5 V

10-bit 50MSPS RGB 3-channel D/A Converter

Description The CXD2307R is a 10-bit high-speed D/A converter for video band, featuring RGB 3-channel I/O. This is ideal for use in high-definition TVs and high-resolution displays. Features • Resolution 10-bit • Maximum conversion speed 50MSPS • RGB 3-channel I/O • Differentia

10-bit 50MSPS RGB 3-channel D/A Converter

Description The CXD2307R is a 10-bit high-speed D/A converter for video band, featuring RGB 3-channel I/O. This is ideal for use in high-definition TVs and high-resolution displays. Features • Resolution 10-bit • Maximum conversion speed 50MSPS • RGB 3-channel I/O • Differentia

Silicon NPN Transistor High Gain Power Amp

Features: • High Voltage • High DC Current Gain • High Collector Power Dissipation Capability

GENERAL PURPOSE AMPLIFIER

Product Description The RF2307 is a general purpose, low cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplifica

GENERAL PURPOSE AMPLIFIER

Product Description The RF2307 is a general purpose, low cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplifica