P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, , low on-resistance and cost-effectiveness. The SOT-23 package is universally preferred for all commercial industrial surface mount applications and suited for low voltage applicati

P-Channel 20-V (D-S) MOSFET

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P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Simple Drive Requirement, Small Package Outline

Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The SOT-23 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/

Simple Drive Requirement

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Small Package Outline

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AP2307GN-HF-3TR - 晶体管, MOSFET, P沟道, -4 A, -16 V, 0.06 ohm, -4.5 V

7.0 Watts - 20 Volts, Class C Microwave 2300 MHz

GENERAL DESCRIPTION The 2307 is a COMMON BASE transistor capable of providing 7 Watts Class C, RF output power at 2300 MHz. Gold metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. The transistor uses a fully hermetic High Temperature Solder Sealed pa

MICROWAVE CW BIPOLAR

[ACRIAN INC] GENERAL DESCRIPTION The 2307 is a common base transistor capable of providing 7 Watts CW RF output power at 2300 MHz. This hermetically sealed transistor is specifically designed for telemetry and telcommunications applications. It uiilizes gold metalilzation and diffused ballasting

3M??Masking Tape 2307

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Pneumatic muffler

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Nylon Hose Clamps

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