| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
丝印代码:AP180N03P;30V N-Channel Enhancement Mode MOSFET 文件:3.01449 Mbytes Page:5 Pages | LEIDITECH 雷卯电子 | |||
P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The 2021-8 J-lead package provides good on-resistance performance and space saving like SC-70-6. ▼ Capable of 2.5V gat | A-POWER 富鼎先进电子 | |||
30V N-Channel Enhancement Mode MOSFET Features - VDS=30V ID =180A - RDS(ON) | APME 永源微电子 | |||
30V N-Channel Enhancement Mode MOSFET Features - VDS=30V ID =180A - RDS(ON) | APME 永源微电子 | |||
N-Channel Enhancement MOSFET Application o Load switch « High Frequency Switching and Synchronous Rectification o Active Clamp in Intermediate « DCIDC Power Supplies | TECHPUBLIC 台舟电子 | |||
30V N-Channel Enhancement Mode MOSFET Features - VDS = 30V ID =180A - RDS(ON) | APME 永源微电子 | |||
30V N-Channel Enhancement Mode MOSFET Features - VDS=30V ID =180A - RDS(ON) | APME 永源微电子 | |||
30V N-Channel Enhancement Mode MOSFET Features - VDS=30V ID =180A - RDS(ON) | APME 永源微电子 | |||
30V N-Channel Enhancement Mode MOSFET Features - VDS=30V ID =180A - RDS(ON) | APME 永源微电子 | |||
40V N-Channel Enhancement Mode MOSFET Features - VDS = 40V ID =180A - RDS(ON) | APME 永源微电子 | |||
40V N-Channel Enhancement Mode MOSFET Features - VDS = 40V ID =180A - RDS(ON) | APME 永源微电子 | |||
45V N-Channel Enhancement Mode MOSFET Features - VDS = 45V ID =180A - RDS(ON) | APME 永源微电子 | |||
63V N-Channel Enhancement Mode MOSFET Features - VDS = 63V ID =180A - RDS(ON) | APME 永源微电子 | |||
60V N-Channel Enhancement Mode MOSFET Features - VDS = 60V ID =180A - RDS(ON) | APME 永源微电子 | |||
65V N-Channel Enhancement Mode MOSFET Features - VDS = 65V ID =180A - RDS(ON) | APME 永源微电子 | |||
60V N-Channel Enhancement Mode MOSFET Features - VDS = 60V ID =180A - RDS(ON) | APME 永源微电子 | |||
60V N-Channel Enhancement Mode MOSFET Features - VDS = 60V ID =180A - RDS(ON) | APME 永源微电子 | |||
60V N-Channel Enhancement Mode MOSFET Features - VDS = 60V ID =180A - RDS(ON) | APME 永源微电子 | |||
85V N-Channel Enhancement Mode MOSFET Features - VDS = 85V ID =180A - RDS(ON) | APME 永源微电子 | |||
85V N-Channel Enhancement Mode MOSFET Features - VDS = 85V ID =180A - RDS(ON) | APME 永源微电子 | |||
85V N-Channel Enhancement Mode MOSFET Features - VDS = 85V ID =180A - RDS(ON) | APME 永源微电子 | |||
85V N-Channel Enhancement Mode MOSFET Features - VDS = 85V ID =180A - RDS(ON) | APME 永源微电子 | |||
85V N-Channel Enhancement Mode MOSFET Features - VDS = 85V ID =180A - RDS(ON) | APME 永源微电子 | |||
85V N-Channel Enhancement Mode MOSFET Features - VDS = 85V ID =180A - RDS(ON) | APME 永源微电子 | |||
P-CHANNEL ENHANCEMENT MODE POWER MOSFET | APEC 富鼎先进 | |||
包装:盒 描述:USB-C PD, QUICK CHARGE 3.0 计算机设备 配件 | ETC 知名厂家 | ETC | ||
包装:散装 描述:USB-C PD, QUICK CHARGE 3.0 计算机设备 配件 | ETC 知名厂家 | ETC | ||
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | APEC 富鼎先进 | |||
N-CHANNEL ENHANCEMENT MODE POWER MOSFET 文件:56.42 Kbytes Page:4 Pages | A-POWER 富鼎先进电子 | |||
30V N-Channel Enhancement Mode MOSFET | APM | |||
Plastic Medium Power Silicon PNP Transistor Plastic Medium Power Silicon PNP Transistor . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 (Min) @ IC = 0.15 Adc • BD180 is complementary with BD179 | MOTOROLA 摩托罗拉 | |||
POWER TRANSISTORS(3.0A,40-80V,12.5W) COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS | MOSPEC 统懋 | |||
Silicon Power Transistor High Power Audio Amplifier Description: The NTE180 (PNP) and NTE181 (NPN) are silicon complementary transistors in a TO3 type case designed for use as output devices in complementary audio amplifiers to 100 watts music power per channel. Features: • High DC Current Gain: hFE = 25 – 100 @ IC = 7.5A • Excellent | NTE | |||
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und | NEC 瑞萨 | |||
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und | NEC 瑞萨 |
AP180产品属性
- 类型
描述
- Operating_Voltage:
2.7~5.6V
- Operating_Current:
4A
- Quiescent_Iq:
100μA
- Iq in_Shutdown:
<1μA
- Rdson:
21mΩ
- Package:
DFN3*2-14L
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
2450+ |
9850 |
只做原装正品现货或订货假一赔十! |
|||||
NS |
22+ |
SOP |
3000 |
原装正品,支持实单 |
|||
JST/日压 |
2608+ |
/ |
484664 |
一级代理,原装现货 |
|||
金升阳 |
900 |
||||||
MORNSUN |
24+ |
con |
10000 |
查现货到京北通宇商城 |
|||
FCLN |
23+ |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
||||
国半 |
23+ |
SOP |
3600 |
绝对全新原装!现货!特价!请放心订购! |
|||
Banner Engineering |
25+ |
电联咨询 |
7800 |
公司现货,提供拆样技术支持 |
|||
JST/日压 |
26+ |
NA |
360000 |
只做原装 |
|||
JST |
05+ |
原厂原装 |
5270 |
只做全新原装真实现货供应 |
AP180芯片相关品牌
AP180规格书下载地址
AP180参数引脚图相关
- bc01
- ba028
- b533
- avr单片机
- avl
- avb
- atmega8
- atmega16
- atmega
- at91sam9263
- at91sam9261
- at89s52
- at89s51
- at89c52
- at89c51
- at89c2051
- as3410
- arm应用
- arm内核
- arm11
- AP2004S
- AP2004N
- AP2004
- AP2003S
- AP2003
- AP2002S
- AP2002
- AP2001S
- AP2001N
- AP2001
- AP-2000
- AP1L3N
- AP1L2Q
- AP1J3P
- AP1F3P
- AP1A4M
- AP1A4A
- AP1A3M
- AP18T10GP
- AP18T10GM-HF
- AP18T10GJ
- AP18T10AGH-HF-3TR
- AP18SRN
- AP18SR
- AP18SCN
- AP18SC-74361
- AP18SC
- AP18N50W
- AP18N20GS-HF
- AP18N20GP-HF
- AP18N20GJ-HF
- AP18N20GI
- AP18N20GH-HF
- AP18N20AGS-HF
- AP1-87054-042
- AP-186
- AP1-8296-1
- AP1802GU
- AP1801GU
- AP-18
- AP17F070064A
- AP-17D-24
- AP1-7876-1
- AP178-321
- AP-176RAOM
- AP-176M
- AP1-76-9
- AP1-76-25
- AP1-76-17
- AP-176
- AP1750/0331
- AP-175
- AP17-39454-30
- AP17-38665-1
- AP17-37432-2
- AP17-36149-1
- AP17-34142-20
- AP17-34142-15
- AP17-34142-10
- AP1704
- AP1703
- AP1702
- AP1701
- AP1695
- AP1694A
- AP1694
- AP1690
- AP1688
- AP1686
- AP1685
- AP1684
- AP1682E
- AP1682
- AP1681
- AP1680
- AP1662
- AP1661A
- AP1661
AP180数据表相关新闻
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ap1722-28pc100%原装正品,领先电子元件代理授权
2020-5-25AP1538SG-13,开关稳压器
AP1538SG-13,开关稳压器
2019-10-23AP2001-单片双通道PWM控制器
特点 - 双PWM控制电路 - 工作电压可高达至50V - 可调节死区时间控制(DTC) - 欠压锁定(UVLO)保护 - 短路保护(SCP) - 可变振荡器频率...... 500KHz的最大 - 2.5V参考电压输出 - 16引脚PDIP和SOP封装 AP2001集成脉宽调制(PWM)到一个单一芯片的控制电路,主要电源稳压器的设计。所有的功能包括一个片上2.5V参考输出,两个误差放大器,可调振荡器,两个死区时间比较器,欠压
2012-12-4AP2002-同步PWM控制器
特点 - 单或双电源应用 - 0.8V+1.0%的参考电压。 - 快速瞬态响应。 - 同步运行的高效率(95%) - 片上电源良好,过电压保护。 - 体积小,具有最少的外部元件 - 软启动和启用功能 - 工业级温度范围 - 欠压锁定功能 - SOP- 14L封装 应用 - 微处理器核心供电 - 低成本的同步应用 - 电压调节模块(VRM) - 解除武装,复员和重返社会终止用
2012-12-4AP2004-PWM降压控制器
特点 - PWM降压控制电路 - 工作电压可高达至27V - 欠压锁定(UVLO)保护 - 短路保护(SCP) - 软启动电路 - 可变振荡器频率 - 300KHz时最大 - 1.25V参考电压输出 - 8引脚PDIP和SOP封装 应用 - 背光逆变器 - 液晶显示器 - XDROM,XDSL产品 - 直流/直流转换器,电脑等 AP2004集成脉
2012-12-4AP1701-3引脚微处理器复位电路
AP1701/2/3/4用于微处理器(μP)监控电源监控电路μP和数字系统。他们提供优良的省去了外部电路的可靠性和低成本组件和+5 V的使用时的调整,+3.3 V,+3.0 V供电的电路。这些电路执行一个单一的功能:他们断言只要VCC电源电压复位信号低于预设的阈值下降,保持VCC已上升后,至少140ms的断言复位阈值以上。复位阈值适用于各种供应的运作电压可。 AP1701/2/3/4有推拉输出。 AP1701/3有一个活跃的低复位输出,而AP1702/ 4有一个活跃的RESET输出高。复位比较忽略VCC上快速瞬变,并输出保证在正确的逻辑国家的VCC低至1V。低电源电流在便携式使用AP1701/
2012-11-22
DdatasheetPDF页码索引
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