18V Dual H-Bridge Motor Driver IC

The AP1018 is the dual H-bridge motor driver which has four drive modes, forward, reverse, brake and standby, to operate up to 18V motor supply voltage. N type LDMOS is built in both high and low side for output driver to achieve small package. It also has under voltage detection and thermal shut do

18V Dual H-Bridge Motor Driver IC

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18V Dual H-Bridge Motor Driver IC

The AP1018AEN is the dual H-bridge motor driver which has four drive modes,forward, reverse, brake and standby, to operate up to 18V motor supply voltage. N type LDMOS is built in both high and low side for output driver to achieve small package. It also has under voltage detection andthermal shut d

Mou lded case for protection

文件：338.83 Kbytes Page：2 Pages

Mou lded case for protection

文件：338.83 Kbytes Page：2 Pages

封装/外壳：24-WFQFN 裸露焊盘 功能：驱动器 - 全集成，控制和功率级 包装：托盘 描述：1.3A DUAL H-BRIDGE MOTOR DRIVER 集成电路（IC） 电机驱动器，控制器

Mou lded case for protection

文件：338.83 Kbytes Page：2 Pages

Mou lded case for protection

文件：338.83 Kbytes Page：2 Pages

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

Power Manager Gallium Arsenide Power Rectifier

Power Manager Gallium Arsenide Power Rectifier . . . ideally suited for high frequency power supplies, free wheeling diodes, and as polarity protection diodes, these state-of-the-art devices have the following features: • Planar Epitaxial Construction • Nitride Passivation for Stable Blocking C

Power Manager Gallium Arsenide Power Rectifier

Power Manager Gallium Arsenide Power Rectifier . . . ideally suited for high frequency power supplies, free wheeling diodes, and as polarity protection diodes, these state-of-the-art devices have the following features: • Planar Epitaxial Construction • Nitride Passivation for Stable Blocking C

N-channel TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a surface mounting plastic package using ’trench’ technology. FEATURES • ’Trench’ technology • Low on-state resistance • Fast switching • Low-profile surface mount package • Logic level compatible A

Low-voltage dual frequency synthesizer for radio telephones

GENERAL DESCRIPTION The UMA1018M BICMOS device integrates prescalers, programmable dividers, and phase comparators to implement two phase-locked loops. The device is designed to operate from 3 NiCd cells, in pocket phones, with low current and nominal 5 V supplies. FEATURES • Low current from 3