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位置：首页 > IC中文资料 > AP100

AP100晶体管资料

  • AP1000别名：AP1000三极管、AP1000晶体管、AP1000晶体三极管

  • AP1000生产厂家：美国API电子公司

  • AP1000制作材料：Si-PNP

  • AP1000性质：低频或音频放大 （LF）_功率放大 （L）

  • AP1000封装形式：直插封装

  • AP1000极限工作电压：450V

  • AP1000最大电流允许值：15A

  • AP1000最大工作频率：25MHZ

  • AP1000引脚数：2

  • AP1000最大耗散功率：

  • AP1000放大倍数：

  • AP1000图片代号：E-44

  • AP1000vtest：450

  • AP1000htest：25000000

  • AP1000atest：15

  • AP1000wtest：0

  • AP1000代换 AP1000用什么型号代替：

型号 功能描述 生产厂家 企业 LOGO 操作
AP100P02D

丝印代码：AP100P02D；-20V P-Channel Enhancement Mode MOSFET

Features - VDS = -20V ID =-100A - RDS(ON)

APME

永源微电子

AP100P02NF

丝印代码：AP100P02NF；-20V P-Channel Enhancement Mode MOSFET

Features - VDS = -20V ID =-100 A - RDS(ON)

APME

永源微电子

AP100P03D

丝印代码：AP100P03D；-30V P-Channel Enhancement Mode MOSFET

Features - VDS = -30V ID =-100A - RDS(ON)

APME

永源微电子

AP100P03P

丝印代码：AP100P03P；-30V P-Channel Enhancement Mode MOSFET

Features - VDS = -30V ID =-100A - RDS(ON)

APME

永源微电子

AP100P03T

丝印代码：AP100P03T；-30V P-Channel Enhancement Mode MOSFET

Features - VDS = -30V ID =-100A - RDS(ON)

APME

永源微电子

AP100P04NF

丝印代码：AP100P04NF；-40V P-Channel Enhancement Mode MOSFET

Features - VDS = -40V ID =-100 A - RDS(ON)

APME

永源微电子

AP100P06D

丝印代码：AP100P06D；-60V P-Channel Enhancement Mode MOSFET

Features - VDS = -60V ID =-100A - RDS(ON)

APME

永源微电子

AP100P06NF

丝印代码：AP100P06NF；-60V P-Channel Enhancement Mode MOSFET

Features - VDS = -60V ID =-100A - RDS(ON)

APME

永源微电子

AP100P06P

丝印代码：AP100P06P；-60V P-Channel Enhancement Mode MOSFET

Features - VDS = -60V ID =-100A - RDS(ON)

APME

永源微电子

AP100P06T

丝印代码：AP100P06T；-60V P-Channel Enhancement Mode MOSFET

Features - VDS = -60V ID =-100A - RDS(ON)

APME

永源微电子

AP100P08D

丝印代码：AP100P08P；-80V P-Channel Enhancement Mode MOSFET

Features - VDS = -80V ID =-100A - RDS(ON)

APME

永源微电子

AP100P08NF

丝印代码：AP100P08NF；-80V P-Channel Enhancement Mode MOSFET

Features - VDS = -80V ID =-100A - RDS(ON)

APME

永源微电子

AP100P08P

丝印代码：AP100P08P；-80V P-Channel Enhancement Mode MOSFET

Features - VDS = -80V ID =-100A - RDS(ON)

APME

永源微电子

AP100P08T

丝印代码：AP100P08T；-80V P-Channel Enhancement Mode MOSFET

Features - VDS = -80V ID =-100A - RDS(ON)

APME

永源微电子

AP1000A

SILICON PIN DIODE

DESCRIPTION: The AP1000A is a Diffused Epitaxial Silicon PIN Diode.

ASI

AP1000B-00

SILICON PIN DIODE CHIP

DESCRIPTION: The AP1000B-00 is a Planar Silicon PIN Diode Chip Designed for High Speed Switch and Limiter Applications Up to 18 GHz. FEATURES INCLUDE: • Low Capacitance - 0.10 pF Typical • Fast Switching - 10 nS Typical • SiO2 Passivation

ASI

AP1000C-11

SILICON PIN DIODE

DESCRIPTION: The AP1000C-11 is a Passivated Epitaxial Silicon PIN Diode Housed in a Hermetically Sealed Glass Package. This Device Iis Designed to Cover a Wide Range of Control Applications Such as RF Switching, Phase Shifting, Modulation, Duplexing Limiting and Pulse Forming.

ASI

AP1001BSQ

Lead-Free Package, Low Conductance Loss

Description The AP1001BSQ used the latest APEC Power MOSFET silicon technology with the advanced technology packaging to provide the lowest on-resistance loss, low profile and dual sided cooling compatible. The GreenFETTM package is compatible with existing soldering techniques and is ideal for

A-POWER

富鼎先进电子

AP100505-ATC3

SMD Type Amber Emitter

Features  Top view 0402 package  Viewing Angle = 60  Compatible with infrared and vapor phase reflow solder process  High reliability  Ultra bright Amber  RoHS compliance Applications  Optical indicator.  Switch and Symbol Display. Description The AP100505-ATC3 is an AIlnGa

CTMICRO

AP100-B10

AC Current transducer AP-B10

AC Current transducer AP-B10 Split core transducer for the electronic measurement AC waveforms current, with galvanic isolation between the primary (High power) and the secondary circuits (Electronic circuit). Switch selectable ranges and RMS 0-5V and 0-10V switch selectable voltage output. Feat

LEM

莱姆

AP100-B420L

AC Current transducer AP-B420L

AC Current transducer AP-B420L Split core transducer for the electronic measurement AC waveforms current, with galvanic isolation between the primary (High power) and the secondary circuits (Electronic circuit). Switch selectable ranges and RMS 4-20mA current output. Features • RMS output • Sp

LEM

莱姆

AP100H03NF2

30V NN-Channel Enhancement Mode MOSFET

Features - N1：VDS = 30V ID =80A - RDS(ON)

APME

永源微电子

AP100N02D

20V N-Channel Enhancement Mode MOSFET

Features - VDS = 20V ID =100A - RDS(ON)

APME

永源微电子

AP100N03AD

30V N-Channel Enhancement Mode MOSFET

Features - VDS=30V ID =100A - RDS(ON)

APME

永源微电子

AP100N03BD

30V N-Channel Enhancement Mode MOSFET

Features - VDS = 30V ID =100A - RDS(ON)

APME

永源微电子

AP100N03CD

30V N-Channel Enhancement Mode MOSFET

Features - VDS=30V ID =100A - RDS(ON)

APME

永源微电子

AP100N03D

30V N-Channel Enhancement Mode MOSFET

Features - VDS = 30V ID =100A - RDS(ON)

APME

永源微电子

AP100N03LD

30V N-Channel Enhancement Mode MOSFET

Features - VDS = 30V ID =100A - RDS(ON)

APME

永源微电子

AP100N03NF

30V N-Channel Enhancement Mode MOSFET

Features - VDS = 30V ID =100A - RDS(ON)

APME

永源微电子

AP100N03P

30V N-Channel Enhancement Mode MOSFET

Features - VDS = 30V ID =100 A - RDS(ON)

APME

永源微电子

AP100N03PT

30V N-Channel Enhancement Mode MOSFET

Features - VDS = 30V ID =100 A - RDS(ON)

APME

永源微电子

AP100N03T

30V N-Channel Enhancement Mode MOSFET

Features - VDS = 30V ID =100 A - RDS(ON)

APME

永源微电子

AP100N03Y

30V N-Channel Enhancement Mode MOSFET

Features - VDS=30V ID =100A - RDS(ON)

APME

永源微电子

AP100N04D

40V N-Channel Enhancement Mode MOSFET

Features - VDS=40V ID=100A - RDS(ON)

APME

永源微电子

AP100N04NF

40V N-Channel Enhancement Mode MOSFET

Features - VDS = 40V ID =100A - RDS(ON)

APME

永源微电子

AP100N06D

60V N-Channel Enhancement Mode MOSFET

Features - VDS = 60V ID =100A - RDS(ON)

APME

永源微电子

AP100N06F

60V N-Channel Enhancement Mode MOSFET

Features - VDS = 60V ID =100A - RDS(ON)

APME

永源微电子

AP100N06NF

60V N-Channel Enhancement Mode MOSFET

Features - VDS = 60V ID =100A - RDS(ON)

APME

永源微电子

AP100N06P

60V N-Channel Enhancement Mode MOSFET

Features - VDS = 60V ID =100A - RDS(ON)

APME

永源微电子

AP100N06T

60V N-Channel Enhancement Mode MOSFET

Features - VDS = 60V ID =100A - RDS(ON)

APME

永源微电子

AP100N07D

68V N-Channel Enhancement Mode MOSFET

Features - VDS = 68V ID =100A - RDS(ON)

APME

永源微电子

AP100N07NF

68V N-Channel Enhancement Mode MOSFET

Features - VDS = 68V ID =100A - RDS(ON)

APME

永源微电子

AP100N07P

68V N-Channel Enhancement Mode MOSFET

Features - VDS = 68V ID =100A - RDS(ON)

APME

永源微电子

AP100N07PT

68V N-Channel Enhancement Mode MOSFET

Features - VDS = 68V ID =100A - RDS(ON)

APME

永源微电子

AP100N07T

68V N-Channel Enhancement Mode MOSFET

Features - VDS = 68V ID =100A - RDS(ON)

APME

永源微电子

AP100N20BF

200V N-Channel Enhancement Mode MOSFET

Features - VDS = 200V ID =120A - RDS(ON)

APME

永源微电子

AP100N20BFPT

200V N-Channel Enhancement Mode MOSFET

Features - VDS = 200V ID =120A - RDS(ON)

APME

永源微电子

AP100N20BP

200V N-Channel Enhancement Mode MOSFET

Features - VDS = 200V ID =120A - RDS(ON)

APME

永源微电子

AP100N20BT

200V N-Channel Enhancement Mode MOSFET

Features - VDS = 200V ID =120A - RDS(ON)

APME

永源微电子

AP100N20MP

200V N-Channel Enhancement Mode MOSFET

Features - VDS = 200V ID =100A - RDS(ON)

APME

永源微电子

AP100N25MP

250V N-Channel Enhancement Mode MOSFET

Features - VDS = 250V ID =100A - RDS(ON)

APME

永源微电子

AP100P01D

丝印代码：2500；-15V P-Channel Enhancement Mode MOSFET

Features - VDS = -15V ID =-100 A - RDS(ON)

APME

永源微电子

AP100P03PT

-30V P-Channel Enhancement Mode MOSFET

Features - VDS = -30V ID =-100A - RDS(ON)

APME

永源微电子

AP100P04D-100A

-40V P-Channel Enhancement Mode MOSFET

Features - VDS = -40V ID =-100 A - RDS(ON)

APME

永源微电子

AP100P06PT

-60V P-Channel Enhancement Mode MOSFET

Features - VDS = -60V ID =-100A - RDS(ON)

APME

永源微电子

AP100P08PT

-80V P-Channel Enhancement Mode MOSFET

Features - VDS = -80V ID =-100A - RDS(ON)

APME

永源微电子

AP100P10D

-95V P-Channel Enhancement Mode MOSFET

Features - VDS = -95V ID =-100A - RDS(ON)

APME

永源微电子

AP100P10NF

-95V P-Channel Enhancement Mode MOSFET

Features - VDS = -95V ID =-100A - RDS(ON)

APME

永源微电子

AP100P10P

-95V P-Channel Enhancement Mode MOSFET

Features - VDS = -95V ID =-100A - RDS(ON)

APME

永源微电子

AP100P10PT

-95V P-Channel Enhancement Mode MOSFET

Features - VDS = -95V ID =-100A - RDS(ON)

APME

永源微电子

AP100产品属性

  • 类型

    描述

  • 测量技术：

    Contact;Non Contact

  • 接口 / 控制：

    Digital Front Panel

  • 显示类型：

    Digital

  • 工作温度：

    -40 to 140 F (-40 to 60 C)

  • 外观形式：

    Panel

  • 转速表形式：

    Instrument / Sensor Package

  • 产品类别：

    Tachometers

AP100供应商更多...

更新时间：2026-5-19 11:11:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
富凯科技(深圳）有限公司
AP1001BSQMOS(场效应管)
APEC/富鼎
24+
SQ
9000
只做原装，欢迎询价，量大价优
询价
贸泽芯城（深圳）电子科技有限公司
AP1000
APEC/富鼎
23+
SOP8
3000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
询价
千层芯半导体(深圳)有限公司
AP1/G2/0P95
Teratech
24+
模块
400
询价
深圳市纳立科技有限公司
AP1/G2/0P95
Teratech
三年内
1983
只做原装正品
询价
现代芯城（深圳）科技有限公司
AP10
26+
N/A
65000
一级代理-主营优势-实惠价格-不悔选择
询价
深圳市安富世纪电子有限公司
AP10
VOL
23+
进口
7300
专注配单,只做原装进口现货
询价
深圳市威尔健半导体有限公司
AP1000
VALENCE
23+
SOP-8
50000
全新原装正品现货,支持订货
询价
深圳市芯皇电子有限公司
AP1
23+
SMD
6000
专业配单保证原装正品假一罚十
询价
深圳市科恒伟业电子有限公司
AP1001BSQ
APEC/富鼎
2450+
QFN
6540
只做原装正品假一赔十为客户做到零风险!!
询价
深圳市中联芯电子有限公司
AP100
AP
25+
SOP8
18000
原装正品 有挂有货 假一赔十
询价

AP100芯片相关品牌

AP100规格书下载地址

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