8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode?

General Description The Supertex AP01 series of high voltage arrays is designed to provide the interface between MOS logic and loads requiring high voltages and intermediate currents. Each circuit consists of eight channel in a common-source configuration with open drains. This design minimizes t

8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode

丝印代码：AP0135AK；NCE Automotive N-Channel Super Trench Power MOSFET

Description The NCEAP0135AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-

丝印代码：AP016N10LL；NCE Automotive N-Channel Super Trench II Power MOSFET

Description The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal

丝印代码：AP016N60VD；NCE Automotive N-Channel Super Trench II Power MOSFET

Description The NCEAP016N60VD uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

丝印代码：AP016N85LL；NCE Automotive N-Channel Super Trench II Power MOSFET

Description The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal

丝印代码：AP0178AK；NCE Automotive N-Channel Super Trench Power MOSFET

Description The NCEAP0178AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high

丝印代码：AP018N60AGU；NCE Automotive N-Channel Super Trench II Power MOSFET

Description The NCEAP018N60AGU uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal fo

丝印代码：AP018N60GU；NCE Automotive N-Channel Super Trench II Power MOSFET

Description The NCEAP018N60GU uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

丝印代码：AP018N85LL；NCE Automotive N-Channel Super Trench II Power MOSFET

Description The NCEAP018N85LL uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

丝印代码：AP01ND35AG；NCE N-Channel Super Trench Power MOSFET

Description The NCEAP01ND35AG uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

Image Signal Processor, 1 MP

AP0100CS is a dedicated image co-processor that enables flexible camera platforms using high performance ON Semiconductor megapixel high dynamic range (HDR) sensors. The two-chip solution of sensor and co-processor allows for multiple camera price and performance points with re-use of circuit board • High Dynamic Range;

图像信号处理器，1 MP

AP0101AT 是一款专用的汽车图像协处理器，能够实现使用安森美半导体百万像素高动态范围 (HDR) 传感器的灵活摄像头平台。传感器和协处理器的双芯片解决方案可实现多种摄像头价格和性能点，能够重用电路板设计，进入市场快，实现设计灵活性。传感器性能由于减少了一个单独协处理器芯片的发热而得以提高，同时可实现高性能功能。AP0101AT 适用于汽车数字环视系统。它结合安森美半导体的 AR0132AT HDR 汽车传感器使用。 • High Dynamic Range;

8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode?

General Description The Supertex AP01 series of high voltage arrays is designed to provide the interface between MOS logic and loads requiring high voltages and intermediate currents. Each circuit consists of eight channel in a common-source configuration with open drains. This design minimizes t

8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode?

General Description The Supertex AP01 series of high voltage arrays is designed to provide the interface between MOS logic and loads requiring high voltages and intermediate currents. Each circuit consists of eight channel in a common-source configuration with open drains. This design minimizes t

8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode?

General Description The Supertex AP01 series of high voltage arrays is designed to provide the interface between MOS logic and loads requiring high voltages and intermediate currents. Each circuit consists of eight channel in a common-source configuration with open drains. This design minimizes t

8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode?

General Description The Supertex AP01 series of high voltage arrays is designed to provide the interface between MOS logic and loads requiring high voltages and intermediate currents. Each circuit consists of eight channel in a common-source configuration with open drains. This design minimizes t

8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode?

General Description The Supertex AP01 series of high voltage arrays is designed to provide the interface between MOS logic and loads requiring high voltages and intermediate currents. Each circuit consists of eight channel in a common-source configuration with open drains. This design minimizes t

8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode?

General Description The Supertex AP01 series of high voltage arrays is designed to provide the interface between MOS logic and loads requiring high voltages and intermediate currents. Each circuit consists of eight channel in a common-source configuration with open drains. This design minimizes t

8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode?

General Description The Supertex AP01 series of high voltage arrays is designed to provide the interface between MOS logic and loads requiring high voltages and intermediate currents. Each circuit consists of eight channel in a common-source configuration with open drains. This design minimizes t

8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode?

General Description The Supertex AP01 series of high voltage arrays is designed to provide the interface between MOS logic and loads requiring high voltages and intermediate currents. Each circuit consists of eight channel in a common-source configuration with open drains. This design minimizes t

8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode?

General Description The Supertex AP01 series of high voltage arrays is designed to provide the interface between MOS logic and loads requiring high voltages and intermediate currents. Each circuit consists of eight channel in a common-source configuration with open drains. This design minimizes t

8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode?

General Description The Supertex AP01 series of high voltage arrays is designed to provide the interface between MOS logic and loads requiring high voltages and intermediate currents. Each circuit consists of eight channel in a common-source configuration with open drains. This design minimizes t

8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode?

General Description The Supertex AP01 series of high voltage arrays is designed to provide the interface between MOS logic and loads requiring high voltages and intermediate currents. Each circuit consists of eight channel in a common-source configuration with open drains. This design minimizes t

8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode?

General Description The Supertex AP01 series of high voltage arrays is designed to provide the interface between MOS logic and loads requiring high voltages and intermediate currents. Each circuit consists of eight channel in a common-source configuration with open drains. This design minimizes t

8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode?

General Description The Supertex AP01 series of high voltage arrays is designed to provide the interface between MOS logic and loads requiring high voltages and intermediate currents. Each circuit consists of eight channel in a common-source configuration with open drains. This design minimizes t

8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode?

General Description The Supertex AP01 series of high voltage arrays is designed to provide the interface between MOS logic and loads requiring high voltages and intermediate currents. Each circuit consists of eight channel in a common-source configuration with open drains. This design minimizes t

8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode?

General Description The Supertex AP01 series of high voltage arrays is designed to provide the interface between MOS logic and loads requiring high voltages and intermediate currents. Each circuit consists of eight channel in a common-source configuration with open drains. This design minimizes t

8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode?

General Description The Supertex AP01 series of high voltage arrays is designed to provide the interface between MOS logic and loads requiring high voltages and intermediate currents. Each circuit consists of eight channel in a common-source configuration with open drains. This design minimizes t

8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode?

General Description The Supertex AP01 series of high voltage arrays is designed to provide the interface between MOS logic and loads requiring high voltages and intermediate currents. Each circuit consists of eight channel in a common-source configuration with open drains. This design minimizes t

8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode?

General Description The Supertex AP01 series of high voltage arrays is designed to provide the interface between MOS logic and loads requiring high voltages and intermediate currents. Each circuit consists of eight channel in a common-source configuration with open drains. This design minimizes t

8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode?

General Description The Supertex AP01 series of high voltage arrays is designed to provide the interface between MOS logic and loads requiring high voltages and intermediate currents. Each circuit consists of eight channel in a common-source configuration with open drains. This design minimizes t

8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode?

General Description The Supertex AP01 series of high voltage arrays is designed to provide the interface between MOS logic and loads requiring high voltages and intermediate currents. Each circuit consists of eight channel in a common-source configuration with open drains. This design minimizes t

8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode?

General Description The Supertex AP01 series of high voltage arrays is designed to provide the interface between MOS logic and loads requiring high voltages and intermediate currents. Each circuit consists of eight channel in a common-source configuration with open drains. This design minimizes t

8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode?

General Description The Supertex AP01 series of high voltage arrays is designed to provide the interface between MOS logic and loads requiring high voltages and intermediate currents. Each circuit consists of eight channel in a common-source configuration with open drains. This design minimizes t

8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode?

General Description The Supertex AP01 series of high voltage arrays is designed to provide the interface between MOS logic and loads requiring high voltages and intermediate currents. Each circuit consists of eight channel in a common-source configuration with open drains. This design minimizes t

High Definition Oscilloscopes

Combining Teledyne LeCroy’s HD4096 high defnition 12-bit technology, with long memory, a compact form factor, 12.1” touch screen display and powerful debug tools, the HDO4000 is the ideal oscilloscope for precise measurements and quick debug. Tools such as WaveScan Search and Find, LabNotebook Rep

FAST RECOVERY RECTIFIER DIODE

PRV : 1000 Volts Io : 0.2 Ampere FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Fast switching for high efficiency * Pb / RoHS Free MECHANICAL DATA : * Case : DO-41 Molded plastic * Epoxy : UL94

Fast-Recovery Rectifier Diodes

Fast-Recovery Rectifier Diodes

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The TO-252 package is universally preferred for all commercial industrial surface mount applications and suited for AC/DC converters. The through-hole version (AP01N60J) is available for low-profile applications. Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Sw

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The TO-252 package is universally preferred for all commercial industrial surface mount applications and suited for AC/DC converters. The through-hole version (AP01N60J) is available for low-profile applications. Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Sw

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The TO-220 package is universally preferred for all commercial industrial applications. The device is suited for DC-DC ,DC-AC converters for telecom, industrial and consumer environment. Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Simple Drive Requir

-60V P-Channel Enhancement Mode MOSFET

Features - VDS = -60V ID =-0.15A - RDS(ON)

丝印代码：0107；-100V P-Channel Enhancement Mode MOSFET

General Features VDS = -100V ID =-0.9A RDS(ON)

封装/外壳：100-VFBGA 功能：处理器 包装：托盘 描述：IC VID IMAGE SGNL PROC 100VFBGA 集成电路（IC） 视频处理

封装/外壳：100-VFBGA 功能：处理器 包装：托盘 描述：IC VID IMAGE SGNL PROC 100VFBGA 集成电路（IC） 视频处理

High-Dynamic Range (HDR) Image Signal Processor (ISP)

文件：4.019 Mbytes Page：73 Pages

High-Dynamic Range (HDR) Image Signal Processor (ISP)

文件：4.019 Mbytes Page：73 Pages

High-Dynamic Range (HDR) Image Signal Processor (ISP)

文件：4.019 Mbytes Page：73 Pages

High-Dynamic Range (HDR) Image Signal Processor (ISP)

文件：4.019 Mbytes Page：73 Pages

High-Dynamic Range (HDR) Image Signal Processor (ISP)

文件：2.16596 Mbytes Page：42 Pages

High-Dynamic Range (HDR) Image Signal Processor (ISP)

文件：2.16596 Mbytes Page：42 Pages

High-Dynamic Range (HDR) Image Signal Processor (ISP)

文件：2.16596 Mbytes Page：42 Pages

High-Dynamic Range (HDR) Image Signal Processor (ISP)

文件：2.16596 Mbytes Page：42 Pages

Simple Drive Requirement, SO-8 Compatible with Heatsink

文件：101.5 Kbytes Page：4 Pages

Simple Drive Requirement

文件：101.5 Kbytes Page：4 Pages

Simple Drive Requirement

文件：53.51 Kbytes Page：5 Pages

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：119.26 Kbytes Page：4 Pages

Simple Drive Requirement

文件：119.26 Kbytes Page：4 Pages

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：55.11 Kbytes Page：4 Pages