8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode?

General Description The Supertex AP01 series of high voltage arrays is designed to provide the interface between MOS logic and loads requiring high voltages and intermediate currents. Each circuit consists of eight channel in a common-source configuration with open drains. This design minimizes t

8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode

8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode?

General Description The Supertex AP01 series of high voltage arrays is designed to provide the interface between MOS logic and loads requiring high voltages and intermediate currents. Each circuit consists of eight channel in a common-source configuration with open drains. This design minimizes t

8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode?

General Description The Supertex AP01 series of high voltage arrays is designed to provide the interface between MOS logic and loads requiring high voltages and intermediate currents. Each circuit consists of eight channel in a common-source configuration with open drains. This design minimizes t

8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode?

General Description The Supertex AP01 series of high voltage arrays is designed to provide the interface between MOS logic and loads requiring high voltages and intermediate currents. Each circuit consists of eight channel in a common-source configuration with open drains. This design minimizes t

8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode?

General Description The Supertex AP01 series of high voltage arrays is designed to provide the interface between MOS logic and loads requiring high voltages and intermediate currents. Each circuit consists of eight channel in a common-source configuration with open drains. This design minimizes t

8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode?

General Description The Supertex AP01 series of high voltage arrays is designed to provide the interface between MOS logic and loads requiring high voltages and intermediate currents. Each circuit consists of eight channel in a common-source configuration with open drains. This design minimizes t

8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode?

General Description The Supertex AP01 series of high voltage arrays is designed to provide the interface between MOS logic and loads requiring high voltages and intermediate currents. Each circuit consists of eight channel in a common-source configuration with open drains. This design minimizes t

8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode?

General Description The Supertex AP01 series of high voltage arrays is designed to provide the interface between MOS logic and loads requiring high voltages and intermediate currents. Each circuit consists of eight channel in a common-source configuration with open drains. This design minimizes t

8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode?

General Description The Supertex AP01 series of high voltage arrays is designed to provide the interface between MOS logic and loads requiring high voltages and intermediate currents. Each circuit consists of eight channel in a common-source configuration with open drains. This design minimizes t

8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode?

General Description The Supertex AP01 series of high voltage arrays is designed to provide the interface between MOS logic and loads requiring high voltages and intermediate currents. Each circuit consists of eight channel in a common-source configuration with open drains. This design minimizes t

8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode?

General Description The Supertex AP01 series of high voltage arrays is designed to provide the interface between MOS logic and loads requiring high voltages and intermediate currents. Each circuit consists of eight channel in a common-source configuration with open drains. This design minimizes t

8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode?

General Description The Supertex AP01 series of high voltage arrays is designed to provide the interface between MOS logic and loads requiring high voltages and intermediate currents. Each circuit consists of eight channel in a common-source configuration with open drains. This design minimizes t

8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode?

General Description The Supertex AP01 series of high voltage arrays is designed to provide the interface between MOS logic and loads requiring high voltages and intermediate currents. Each circuit consists of eight channel in a common-source configuration with open drains. This design minimizes t

8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode?

General Description The Supertex AP01 series of high voltage arrays is designed to provide the interface between MOS logic and loads requiring high voltages and intermediate currents. Each circuit consists of eight channel in a common-source configuration with open drains. This design minimizes t

8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode?

General Description The Supertex AP01 series of high voltage arrays is designed to provide the interface between MOS logic and loads requiring high voltages and intermediate currents. Each circuit consists of eight channel in a common-source configuration with open drains. This design minimizes t

8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode?

General Description The Supertex AP01 series of high voltage arrays is designed to provide the interface between MOS logic and loads requiring high voltages and intermediate currents. Each circuit consists of eight channel in a common-source configuration with open drains. This design minimizes t

8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode?

General Description The Supertex AP01 series of high voltage arrays is designed to provide the interface between MOS logic and loads requiring high voltages and intermediate currents. Each circuit consists of eight channel in a common-source configuration with open drains. This design minimizes t

8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode?

General Description The Supertex AP01 series of high voltage arrays is designed to provide the interface between MOS logic and loads requiring high voltages and intermediate currents. Each circuit consists of eight channel in a common-source configuration with open drains. This design minimizes t

8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode?

General Description The Supertex AP01 series of high voltage arrays is designed to provide the interface between MOS logic and loads requiring high voltages and intermediate currents. Each circuit consists of eight channel in a common-source configuration with open drains. This design minimizes t

8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode?

General Description The Supertex AP01 series of high voltage arrays is designed to provide the interface between MOS logic and loads requiring high voltages and intermediate currents. Each circuit consists of eight channel in a common-source configuration with open drains. This design minimizes t

8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode?

General Description The Supertex AP01 series of high voltage arrays is designed to provide the interface between MOS logic and loads requiring high voltages and intermediate currents. Each circuit consists of eight channel in a common-source configuration with open drains. This design minimizes t

8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode?

General Description The Supertex AP01 series of high voltage arrays is designed to provide the interface between MOS logic and loads requiring high voltages and intermediate currents. Each circuit consists of eight channel in a common-source configuration with open drains. This design minimizes t

8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode?

General Description The Supertex AP01 series of high voltage arrays is designed to provide the interface between MOS logic and loads requiring high voltages and intermediate currents. Each circuit consists of eight channel in a common-source configuration with open drains. This design minimizes t

8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode?

General Description The Supertex AP01 series of high voltage arrays is designed to provide the interface between MOS logic and loads requiring high voltages and intermediate currents. Each circuit consists of eight channel in a common-source configuration with open drains. This design minimizes t

High Definition Oscilloscopes

Combining Teledyne LeCroy’s HD4096 high defnition 12-bit technology, with long memory, a compact form factor, 12.1” touch screen display and powerful debug tools, the HDO4000 is the ideal oscilloscope for precise measurements and quick debug. Tools such as WaveScan Search and Find, LabNotebook Rep

Fast-Recovery Rectifier Diodes

Fast-Recovery Rectifier Diodes

FAST RECOVERY RECTIFIER DIODE

PRV : 1000 Volts Io : 0.2 Ampere FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Fast switching for high efficiency * Pb / RoHS Free MECHANICAL DATA : * Case : DO-41 Molded plastic * Epoxy : UL94

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The TO-252 package is universally preferred for all commercial industrial surface mount applications and suited for AC/DC converters. The through-hole version (AP01N60J) is available for low-profile applications. Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Sw

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The TO-252 package is universally preferred for all commercial industrial surface mount applications and suited for AC/DC converters. The through-hole version (AP01N60J) is available for low-profile applications. Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Sw

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The TO-220 package is universally preferred for all commercial industrial applications. The device is suited for DC-DC ,DC-AC converters for telecom, industrial and consumer environment. Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Simple Drive Requir

封装/外壳：100-VFBGA 功能：处理器 包装：托盘 描述：IC VID IMAGE SGNL PROC 100VFBGA 集成电路（IC） 视频处理

封装/外壳：100-VFBGA 功能：处理器 包装：托盘 描述：IC VID IMAGE SGNL PROC 100VFBGA 集成电路（IC） 视频处理

Image Signal Processor, 1 MP

High-Dynamic Range (HDR) Image Signal Processor (ISP)

文件：4.019 Mbytes Page：73 Pages

High-Dynamic Range (HDR) Image Signal Processor (ISP)

文件：4.019 Mbytes Page：73 Pages

High-Dynamic Range (HDR) Image Signal Processor (ISP)

文件：4.019 Mbytes Page：73 Pages

High-Dynamic Range (HDR) Image Signal Processor (ISP)

文件：4.019 Mbytes Page：73 Pages

图像信号处理器，1 MP

High-Dynamic Range (HDR) Image Signal Processor (ISP)

文件：2.16596 Mbytes Page：42 Pages

High-Dynamic Range (HDR) Image Signal Processor (ISP)

文件：2.16596 Mbytes Page：42 Pages

High-Dynamic Range (HDR) Image Signal Processor (ISP)

文件：2.16596 Mbytes Page：42 Pages

High-Dynamic Range (HDR) Image Signal Processor (ISP)

文件：2.16596 Mbytes Page：42 Pages

Simple Drive Requirement, SO-8 Compatible with Heatsink

文件：101.5 Kbytes Page：4 Pages

Simple Drive Requirement

文件：101.5 Kbytes Page：4 Pages

Simple Drive Requirement

文件：53.51 Kbytes Page：5 Pages

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：119.26 Kbytes Page：4 Pages

Simple Drive Requirement

文件：119.26 Kbytes Page：4 Pages

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：55.11 Kbytes Page：4 Pages

Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and costeffectiveness effectiveness

文件：111.58 Kbytes Page：5 Pages

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：63.72 Kbytes Page：4 Pages

N-Channel 650 V (D-S) MOSFET

文件：1.08592 Mbytes Page：9 Pages

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：104.45 Kbytes Page：4 Pages

100 Avalanche Rated, Fast Switching Speed

文件：59.99 Kbytes Page：4 Pages

Fast Switching Speed

文件：59.99 Kbytes Page：4 Pages

N-Channel 650 V (D-S) MOSFET

文件：1.08595 Mbytes Page：9 Pages

N-Channel MOSFET uses advanced trench technology

文件：759.16 Kbytes Page：5 Pages

100 Avalanche Test, Fast Switching Characteristics

文件：96.01 Kbytes Page：4 Pages

Fast Switching Characteristics

文件：107.23 Kbytes Page：5 Pages

Fast Switching Characteristics

文件：96.01 Kbytes Page：4 Pages