MOSFET：N-Channel

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very effi

30V N-Channel AlphaMOS

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4-channel PWM driver for CD and MD players

The BH6510FS is a 4-channel PWM driver for CD and MD player motors and actuators. The power MOSFET in the output stage assures low power consumption for applications. Features 1) Internal 4-channel power MOS H-bridge. 2) Adaptable for PWM input. 3) Low ON resistance. 4) Low power consumption.

Smart Highside High Current Power Switch

General Description N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load current sense, integrated in Smart SIPMOS chip on chip technology. Fully protected by embedded protection functions. Features •Overload protection •Current li

1A Power Operational Amplifier

Overview The LA6510 is a dual power operational amplifier IC capable of delivering larger output currents than conventional operational amplifiers. The LA6510 features an on-chip current limiter and provides high voltage gain and a high common-mode rejection ratio. The LA6510 is an ideal choice

DIODE ARRAY CIRCUITS

DESCRIPTION The SG6100/SG6511 and SG6101/SG6510 diode arrays are monolithic, high breakdown, fast switching speed diode arrays. The SG6100/SG6511 is configured with 7 straight through diodes, while the SG6101/SG6510 has 8 straight through diodes. FEATURES • 75V minimum breakdown voltage

SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

VBR : 6.8 - 440 Volts PPK : 600 Watts FEATURES : * 600W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min.) * Typical IR less then 1mA above 10V * Pb / RoHS Free