P-Channel MOSFET uses advanced trench technology

Description： This P-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=-60V,ID=-35A,RDS(ON)

isc P-Channel MOSFET Transistor

• FEATURES • With TO-251(IPAK) packaging • High speed switching • Easy to use • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Power supply • DC-DC converters • Motor control • Switching applications

P-Channel Enhancement Mode Field Effect Transistor

文件：243 Kbytes Page：6 Pages

P沟道MOSFET (8V - 60V)

Interval Timer

APPLICATIONS: Designed to control an electrical circuit for a set time upon operation of the manual setting knob which is directly connected to the switch operating cam. To assure positive setting action, this timer does not set through a clutch. Calibrated dial settings are available in ranges fr

Passive Components

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SPACERS & STANDOFFS

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Replace “XX” with 01 through 12 for number of poles 11/16 (.688) pitch

文件：597.06 Kbytes Page：3 Pages

Detectable Buried Barricade Tapes 400 Series

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