MOSFET：N-Channel

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very effi

30V N-Channel MOSFET

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丝印代码：IPAK；isc N-Channel MOSFET Transistor

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N-Channel 30-V (D-S) MOSFET

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POWER TRANSISTORS(5.0A,1300-1500V,55W)

5.0 AMPERE POWER TRANSISTORS 1300-1500 VOLTS 55 WATTS

5.0 AMPERES NPN SILICON POWER TRANSISTOR 700 VOLTS

Horizontal Deflection Transistor . . . designed for use in televisions. • Collector–Emitter Voltages VCES 1500 Volts • Fast Switching — 400 ns Typical Fall Time • Low Thermal Resistance 1°C/W Increased Reliability • Glass Passivated (Patented Photoglass). Triple Diffused Mesa Te

POWER TRANSISTORS(5.0A,1300-1500V,55W)

5.0 AMPERE POWER TRANSISTORS 1300-1500 VOLTS 55 WATTS

SMALL OUTLINE OPTOISOLATORS TRANSISTOR OUTPUT

These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high density applications, and eliminate the need for through–the–board mounti

SCHOTTKY BARRIER RECTIFIERS(2.0A,70-100V)

SCHOTTKY BARRIER RECTIFIER 2.0A 70-100V