N-Channel Enhancement Mode Field Effect Transistor

General Description The AOD476 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard product AOD476 is Pb-free (meets ROHS & Sony 259 specifications). AOD4

丝印代码：DPAK；isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 25A@ TC=25℃ • Drain Source Voltage- : VDSS=20V(Min) • Static Drain-Source On-Resistance : RDS(on) = 21mΩ (Max) • 100 avalanche tested • Minimum Lot-to-Lot

MOSFET：N-Channel

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very effi

N-Channel Enhancement Mode Field Effect Transistor

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N-Channel Enhancement Mode Field Effect Transistor

文件：213.76 Kbytes Page：6 Pages

CMOS Monolithic 256x18 Color Palette RAM-DAC

GENERAL DESCRIPTION The ADV476 (ADV®) is a pin compatible and software compatible RAM-DAC designed specifically for VGA and Personal System/2 color graphics. The ADV476 is a complete analog output RAM-DAC on a single monolithic chip. The part contains a 256318 color lookup table, a pixel mask re

Round Type

Round Type φ 3.2 mm Series

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI MRF476is Designed for 12.5 V FM Large-Signal Amplifier Applications to 30 MHz.

Silicon NPN Transistor RF Power Output

Description: The NTE476 is a silicon epitaxial NPN–planar transistor which employs a multi–emitter electrode design. This feature together with a heavily diffused base matrix located between the individual emitters result in high RF current handling capability, high power gain, low base resista

Round Type

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